Design of Band Engineered HgCdTe nBn Detectors for MWIR and LWIR Applications

被引：26

作者：

Akhavan, Nima Dehdashti ^{[1
]}

Jolley, Gregory ^{[1
]}

Umana-Membreno, Gilberto A. ^{[1
]}

Antoszewski, Jarek ^{[1
]}

Faraone, Lorenzo ^{[1
]}

机构：

[1] Univ Western Australia, Dept Elect Elect & Comp Engn, Crawley, WA 6009, Australia

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2015年 / 62卷 / 03期

基金：

澳大利亚研究理事会;

关键词：

Band discontinuity; doping modulation; infrared (IR) detectors; mercury cadmium telluride (HgCdTe); n-type/barrier/n-type (nBn); unipolar barrier;

D O I：

10.1109/TED.2015.2389229

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we present a theoretical study of mercury cadmium telluride (HgCdTe)-based unipolar n-type/barrier/n-type (nBn) infrared (IR) detector structures for midwave IR and longwave IR spectral bands. To achieve the ultimate performance of nBn detectors, a bandgap engineering method is proposed to remove the undesirable valence band discontinuity that is currently limiting the performance of conventional HgCdTe nBn detectors. Our proposed band engineering method relies on simultaneous grading of the barrier composition and doping density profiles, leading to efficient elimination of the valence band discontinuity. This allows the detector to operate at |V-bias| < 50 mV, rendering all tunneling-related dark current components insignificant and allowing the detector to achieve the maximum possible diffusion current limited performance.

引用

页码：722 / 728

页数：7

共 16 条

[1] Performance Modeling of Bandgap Engineered HgCdTe-Based nBn Infrared Detectors [J].

Akhavan, Nima Dehdashti ;

Jolley, Gregory ;

Umana-Membreno, Gilberto Antonio ;

Antoszewski, Jarek ;

Faraone, Lorenzo .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2014, 61 (11) :3691-3698

[2] Analysis of temperature dependence of dark current mechanisms for long-wavelength HgCdTe photovoltaic infrared detectors [J].

Hu, W. D. ;

Chen, X. S. ;

Yin, F. ;

Quan, Z. J. ;

Ye, Z. H. ;

Hu, X. N. ;

Li, Z. F. ;

Lu, W. .

JOURNAL OF APPLIED PHYSICS, 2009, 105 (10)

[3] Design and Modeling of HgCdTe nBn Detectors [J].

Itsuno, A. M. ;

Phillips, J. D. ;

Velicu, S. .

JOURNAL OF ELECTRONIC MATERIALS, 2011, 40 (08) :1624-1629

[4] Mid-wave infrared HgCdTe nBn photodetector [J].

Itsuno, Anne M. ;

Phillips, Jamie D. ;

Velicu, Silviu .

APPLIED PHYSICS LETTERS, 2012, 100 (16)

[5] Deep-level traps induced dark currents in extended wavelength InxGa1-xAs/InP photodetector [J].

Ji, Xiaoli ;

Liu, Baiqing ;

Xu, Yue ;

Tang, Hengjing ;

Li, Xue ;

Gong, HaiMei ;

Shen, Bo ;

Yang, Xuelin ;

Han, Ping ;

Yan, Feng .

JOURNAL OF APPLIED PHYSICS, 2013, 114 (22)

[6] Enhanced numerical analysis of current-voltage characteristics of long wavelength infrared n-on-p HgCdTe photodiodes [J].

Jozwikowski, K. ;

Kopytko, M. ;

Rogalski, A. ;

Jozwikowska, A. .

JOURNAL OF APPLIED PHYSICS, 2010, 108 (07)

[7]

Klipstein P., 2012, P SOC PHOTO-OPT INS, V8268, P8268

[8]

Klipstein P., 2010, P SOC PHOTO-OPT INS, V7608

[9]

Klipstein P., 2009, U.S. Patent, Patent No. [8004012 B2, 8004012]

[10] Fundamental limits of MWIR HgCdTe barrier detectors operating under non-equilibrium mode [J].

Kopytko, M. ;

Jozwikowski, K. ;

Rogalski, A. .

SOLID-STATE ELECTRONICS, 2014, 100 :20-26

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