Demonstration of 8-inch Thin-Film Sc0.3Al0.7N BAW Resonator with High Electromechanical Coupling Coefficient

被引：1
|
作者：
Qian, You [1 ]
Wang, Xinghua [1 ]
Zhang, Ying [1 ]
Liu, Chen [1 ]
Zhu, Yao [1 ]
机构：
[1] ASTAR, Inst Microelect, Singapore, Singapore
来源：
2024 IEEE MTT-S INTERNATIONAL CONFERENCE ON MICROWAVE ACOUSTICS & MECHANICS, IC-MAM | 2024年
关键词：
BAW; ScAlN; 30%; Coupling;
D O I：
10.1109/IC-MAM60575.2024.10539044
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this study, we introduce the development of high-quality Sc0.3Al0.7N thin films (<= 500 nm) for BAW resonators operating at 4 GHz and 6 GHz. Our findings reveal a substantial enhancement in the material coupling coefficient, exceeding 23%. This advancement enhances the potential of BAW technology in meeting the requirements of emerging wireless communication standards, particularly in terms of bandwidth.
引用
收藏
页码：5 / 8
页数：4
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