Fabrication of one-dimensional Zn-doped Bi2S3 nanorods for photodiode applications

被引：2
作者：
Arumugam, Jayachandhiran [1 ]
George, Amal [2 ]
Saravanan, P. [3 ]
Rahul, Subramani [2 ]
Raj, Alphonse Dhayal [2 ]
Albeshr, Mohammed F. [4 ]
Johnsundaram, Savarenathan [2 ]
Selvankumar, Thangaswamy [5 ]
Karthika, Duraisamy [6 ]
Kumar, Jothi Vinoth [7 ]
机构：
[1] Velammal Engn Coll Autonomous, Dept Phys, Chennai 600066, India
[2] Thiruvalluvar Univ, Sacred Heart Coll Autonomous, Dept Phys, Vellore, Tamil Nadu, India
[3] St Josephs Coll Engn, Dept Chem, Chennai, Tamil Nadu, India
[4] King Saud Univ, Coll Sci, Dept Zool, Riyadh, Saudi Arabia
[5] Saveetha Univ, Saveetha Med Coll & Hosp, Saveetha Inst Med & Tech Sci, Ctr Global Hlth Res,Biomat Res Unit, Chennai, Tamil Nadu, India
[6] Agni Coll Technol, Dept Chem Engn, Thazhambur, Tamil Nadu, India
[7] Kyung Hee Univ, BioNanocomposite Res Ctr, Dept Food & Nutr, Seoul, South Korea
来源：
LUMINESCENCE | 2024年 / 39卷 / 09期
关键词：
photocurrent; photodiodes; P-N junction; Zn-doped Bi2S3 nanorods; TIO2; THIN-FILMS; HIGH-PERFORMANCE; FACILE SYNTHESIS; NANOPARTICLES; PHOTODETECTORS; NANOWIRES; GRAPHENE;
D O I：
10.1002/bio.4901
中图分类号：
O65 [分析化学];
学科分类号：
070302 ; 081704 ;
摘要：
In this research, the impact of the different zinc (Zn) concentrations on the physical and optoelectronic properties of Bi2S3 nanorods as self-powered and photodiode applications was investigated. The performance of P-N junction photodiodes has been for decades since they are crucial in energy applications. The structure, degree of crystallinity, and shape of Zn-doped Bi2S3 nanorods of various doping percentages formed onto the indium tin oxide (ITO) substrates by the dip coating technique are investigated using X-ray powder diffraction (XRD) and SEM. With increasing illumination time, the current-voltage (I-V) graphs demonstrate a rise in photocurrent. The diode's idealist factor was estimated using the I-V technique under 30 min of light illumination.
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页数：9
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