共 42 条
[31]
The temperature dependence of ion-beam-induced amorphization in beta-SiC (reprinted from Nuclear Instruments and Methods in Physics Research, vol 106, pg 298-302, 1995)
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ION BEAM MODIFICATION OF MATERIALS,
1996,
:298-302
[32]
Electronic and annealing properties of a metastable He-ion implantation induced defect in GaAs (reprinted from Nuclear Instruments and Methods in Physics Research, vol 106, pg 323-327, 1995)
[J].
ION BEAM MODIFICATION OF MATERIALS,
1996,
:323-327
[33]
Ion beam induced epitaxial crystallization and interfacial amorphization at amorphous/crystalline interfaces in germanium (reprinted from Nuclear Instruments and methods in Physics Research, vol 106, pg 350-354, 1995)
[J].
ION BEAM MODIFICATION OF MATERIALS,
1996,
:350-354
[34]
The use of low energy, ion induced nuclear reactions for proton radiotherapy applications (Reprinted from Nuclear Instruments and Methods in Physics Research B, vol 106, pg 606-617, 1995)
[J].
ION BEAM MODIFICATION OF MATERIALS,
1996,
:606-617
[35]
Ion beam induced epitaxial recrystallization of alumina thin films deposited on sapphire (Reprinted from Nuclear Instruments and Methods in Physics Research B, vol 106, pg 579-582, 1995)
[J].
ION BEAM MODIFICATION OF MATERIALS,
1996,
:579-582
[36]
Implantation-induced defects in high-dose O-implanted Si (reprinted from Nuclear Instruments and Methods in Physics Research, vol 106, pg 409-414, 1995)
[J].
ION BEAM MODIFICATION OF MATERIALS,
1996,
:409-414
[37]
Ne+, Ar+ and Xe+ ion bombardment induced and suppressed topography on Si (Reprinted from Nuclear Instruments and Methods in Physics Research B, vol 106, pg 174-178, 1995)
[J].
ION BEAM MODIFICATION OF MATERIALS,
1996,
:174-178
[38]
Ion mass dependence of normalized regrowth rate in MeV ion beam induced epitaxial crystallization (Reprinted from Nuclear Instruments and Methods in Physics Research B, vol 106, pg 277-280, 1995)
[J].
ION BEAM MODIFICATION OF MATERIALS,
1996,
:277-280
[39]
Damage of M-type baryum hexaferrites induced by GeV-heavy ion irradiations (Reprinted from Nuclear Instruments and Methods in Physics Research B, vol 106, pg 567-572, 1995)
[J].
ION BEAM MODIFICATION OF MATERIALS,
1996,
:567-572
[40]
Ion beam induced epitaxial regrowth and layer by layer amorphization of compound semiconductors during MeV ion implantation (Reprinted from Nuclear Instruments and Methods in Physics Research B, vol 106, pg 281-288, 1995)
[J].
ION BEAM MODIFICATION OF MATERIALS,
1996,
:281-288