Survey on analytical and numerical methods for lightning-induced voltages calculations (vol 106, pg 905, 2024)

被引：0
作者：
Silva Alves, Adriany Fabricia [1 ]
Araujo, Marcel Ayres [1 ]
机构：
[1] Fed Rural Univ Pernambuco UFRPE, Acad Unit Cabo Santo Agostinho UACSA, Cabo De Santo Agostinho, PE, Brazil
来源：
ELECTRICAL ENGINEERING | 2024年 / 106卷 / 04期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：5267 / 5267
页数：1
相关论文
共 41 条
  • [21] Numerical simulation and analytical description of thermally induced birefringence in laser rods (vol 36, pg 620, 2000)
    Schmid, M
    Weber, R
    Graf, T
    Roos, M
    Weber, HP
    [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 2001, 37 (07) : 951 - 951
  • [22] Regional Sources and CH4 Seasonal Cycle in Central Siberia and the Arctic: Observations and Numerical Calculations (vol 37, pg 82, 2024)
    Moiseenko, K. B.
    Shtabkin, Yu. A.
    Vasileva, A. V.
    Skorokhod, A. I.
    Fedorova, E. I.
    [J]. ATMOSPHERIC AND OCEANIC OPTICS, 2024, 37 (02) : 292 - 292
  • [23] Analytical and numerical techniques for damage localization of rectangular plates using higher-order moments of inertia (vol 235, pg 851, 2024)
    Teimoori, Hossein
    Faal, Reza T.
    Bagheri, M.
    [J]. ACTA MECHANICA, 2024,
  • [24] Analysis of Numerical Estimations of the Yarkovsky Effect Parameter and Their Comparison with an Analytical Representation on the Example of Near-Sun Asteroids (VOL 67, pg 1065, 2024)
    Galushina, T. Yu.
    Bashaev, D. L.
    Letner, O. N.
    Syusina, O. M.
    [J]. RUSSIAN PHYSICS JOURNAL, 2024, 67 (08) : 1271 - 1271
  • [25] Experimental and numerical investigation of Engineered Injection and Extraction (EIE) induced with three-dimensional flow field (Vol 26, pg 304, 2024)
    Asha, Farsana M.
    Sajikumar, N.
    Subaida, E. A.
    [J]. JOURNAL OF HYDROINFORMATICS, 2024, 26 (03) : 708 - 708
  • [26] Atomic mixing induced in metallic bilayers by high electronic excitations (Reprinted from Nuclear Instruments and Methods in Physics Research B, vol 106, pg 28-33, 1995)
    Leguay, R
    Dunlop, A
    Dunstetter, F
    Lorenzelli, N
    Braslau, A
    Bridou, F
    Corno, J
    Pardo, B
    Chevallier, J
    Colliex, C
    Menelle, A
    Rouviere, JL
    [J]. ION BEAM MODIFICATION OF MATERIALS, 1996, : 28 - 33
  • [27] Ion beam-induced interfacial growth in Si and silicides (Reprinted from Nuclear Instruments and Methods in Physics Research B, vol 106, pg 206-215, 1995)
    Fortuna, F
    Nedellec, P
    Ruault, MO
    Bernas, H
    Lin, XW
    Boucaud, P
    [J]. ION BEAM MODIFICATION OF MATERIALS, 1996, : 206 - 215
  • [28] Impurity effects on oxygen precipitation induced by MeV implants in Cz silicon (reprinted from Nuclear Instruments and Methods in Physics Research, vol 106, pg 419-423, 1995)
    Rimini, E
    Raineri, V
    LaFerla, A
    Galvagno, G
    Franco, G
    Carnera, A
    Gasparotto, A
    [J]. ION BEAM MODIFICATION OF MATERIALS, 1996, : 419 - 423
  • [29] Diffusion and trapping of au to cavities induced by H-implantation in Si (reprinted from Nuclear Instruments and Methods in Physics Research, vol 106, pg 424-428, 1996)
    WongLeung, J
    Williams, JS
    Nygren, E
    [J]. ION BEAM MODIFICATION OF MATERIALS, 1996, : 424 - 428
  • [30] The temperature dependence of ion-beam-induced amorphization in beta-SiC (reprinted from Nuclear Instruments and Methods in Physics Research, vol 106, pg 298-302, 1995)
    Weber, WJ
    Wang, LM
    [J]. ION BEAM MODIFICATION OF MATERIALS, 1996, : 298 - 302
12345