Investigation of Temperature-Dependent Mechanism of TCR in a-Si:H for Microbolometer Applications

被引：0

作者：

Kim, Ki-Nam ^{[1
]}

Byun, Jun-Ho ^{[1
]}

Ko, Woon-San ^{[1
]}

Lee, Do-Yeon ^{[1
]}

Kwon, So-Yeon ^{[1
]}

Lee, Hi-Deok ^{[1
]}

Lee, Ga-Won ^{[1
]}

机构：

[1] Chungnam Natl Univ, Dept Elect Engn, Daejeon 34134, South Korea

来源：

IEEE SENSORS JOURNAL | 2024年 / 24卷 / 03期

关键词：

1/f noise; Sensors; Temperature measurement; Doping; Films; Electrical resistance measurement; Annealing; activation energy; amorphous silicon; annealing; contact resistance; potential barrier; temperature coefficient of resistance (TCR); thermal emission; trap; MIXED-PHASE SILICON; LOW-FREQUENCY NOISE; 1/F NOISE; INTERFACE TRAPS; FLICKER NOISE; FILMS; MODEL; PERFORMANCE; DEVICES;

D O I：

10.1109/JSEN.2023.3340700

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This study investigates the temperature coefficient of resistance (TCR) of a-Si:H according to process conditions to find out the temperature-dependent mechanism for microbolometer applications. Four types of a-Si:H films were prepared using plasma-enhanced chemical vapor deposition (PECVD) by adjusting the SCCM of the doping gases: high B2H6 (B-1), low B2H6 (B-2), high PH3 (P-1), and low PH3 (P-2). Secondary ion mass spectroscopy analysis is performed to confirm the doping concentration. N-type (P1 or P2) seems to be less favorable for improving the channel conductance, but it has a large TCR meaning that P2 has the highest temperature dependency as well as the largest absolute TCR value. After preannealing in D-2 atmospheres, P-1 and P-2 show a significant reduction in the TCR. In addition, R-C is observed to be reduced with TCR after postmetal annealing. The 1/ f noise is also correlated with TCR and is found to have a tradeoff relation. These results imply that the TCR is primarily influenced by the trap states in a-Si:H film. Based on the experimental results, thermal-assisted transport through the local potential barrier is suggested for the temperature dependency of TCR in a-Si:H.

引用

页码：2452 / 2461

页数：10

共 60 条

[1] Ab initio estimate of temperature dependence of electrical conductivity in a model amorphous material:: Hydrogenated amorphous silicon [J].

Abtew, T. A. ;

Zhang, Mingliang ;

Drabold, D. A. .

PHYSICAL REVIEW B, 2007, 76 (04)

[2] Amorphous Silicon Thin-Films for Uncooled Infrared Microbolometer Sensors [J].

Ajmera, Sameer K. ;

Syllaios, A. J. ;

Tyber, Gregory S. ;

Taylor, Michael F. ;

Hollingsworth, Russell E. .

INFRARED TECHNOLOGY AND APPLICATIONS XXXVI, PTS 1 AND 2, 2010, 7660

[3] Reduction of interface traps at the amorphous-silicon/crystalline-silicon interface by hydrogen and nitrogen annealing [J].

Alnuaimi, Aaesha ;

Islam, Kazi ;

Nayfeh, Ammar .

SOLAR ENERGY, 2013, 98 :236-240

[4] The effects of post-annealing on the performance of ZnO thin film transistors [J].

Bang, Seokhwan ;

Lee, Seungjun ;

Park, Joohyun ;

Park, Soyeon ;

Ko, Youngbin ;

Choi, Changhwan ;

Chang, Hojung ;

Park, Hyungho ;

Jeon, Hyeongtag .

THIN SOLID FILMS, 2011, 519 (22) :8109-8113

[5] Uncooled Infrared Microbolometer Arrays and their Characterisation Techniques [J].

Bhan, R. K. ;

Saxena, R. S. ;

Jalwania, C. R. ;

Lomash, S. K. .

DEFENCE SCIENCE JOURNAL, 2009, 59 (06) :580-589

[6]

Breuil L, 2016, IEEE INT MEM WORKSH, DOI 10.1109/IMW.2016.7495277

[7] High temperature coefficient of resistance and low noise tungsten oxide doped amorphous vanadium oxide thin films for microbolometer applications [J].

Celik, Ozer ;

Duman, Memed .

THIN SOLID FILMS, 2019, 691

[8] FLICKER NOISE IN CMOS TRANSISTORS FROM SUBTHRESHOLD TO STRONG INVERSION AT VARIOUS TEMPERATURES [J].

CHANG, JM ;

ABIDI, AA ;

VISWANATHAN, CR .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (11) :1965-1971

[9]

Chasin A., 2020, P IEEE INT REL PHYS, P1

[10] Monolithic two-dimensional arrays of micromachined microstructures for infrared applications [J].

Cole, BE ;

Higashi, RE ;

Wood, RA .

PROCEEDINGS OF THE IEEE, 1998, 86 (08) :1679-1686

← 1 2 3 4 5 6 →