X-band quasi class-F HPA MMIC using DynaFET GaN HEMT modelling

被引：1

作者：

Jeong, Junhyung ^{[1
]}

Cho, Kyujun ^{[1
]}

Ji, Honggu ^{[1
]}

Chang, Woojin ^{[1
]}

Lee, Jongmin ^{[1
]}

Min, Byoung-gue ^{[1
]}

Kang, Dongmin ^{[1
]}

机构：

[1] Elect & Telecommun Res Inst, Terr & Nonterr Integrated Telecommun Res Lab, Daejeon, South Korea

来源：

ELECTRONICS LETTERS | 2024年 / 60卷 / 10期

关键词：

microwave amplifiers; monolithic microwave integrated circuit power amplifiers; solid modelling;

D O I：

10.1049/ell2.13221

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper proposes an X-band quasi Class-F high power amplifier (HPA) monolithic microwave integrated circuit (MMIC) using DynaFET gallium nitride (GaN) high electron mobility transistor (HEMT) modelling. To enhance efficiency, a novel quasi Class-F output matching circuit is proposed. DynaFET modelling for GaN HEMT is utilized for accurate HPA MMIC design. The proposed quasi Class-F HPA MMIC, fabricated using ETRI's 0.15 mu m GaN process, achieves an output power of 43.5 similar to 44.5 dBm with a power-added efficiency of 36 similar to 40.7% within the 9.1 similar to 10.3 GHz frequency bandwidth. This paper introduces a novel X-band quasi Class-F high power amplifier (HPA) monolithic microwave integrated circuit (MMIC) using DynaFET gallium nitride (GaN) high electron mobility transistor (HEMT) modelling. A novel quasi Class-F output matching circuit is proposed to improve efficiency, with DynaFET modelling for GaN HEMT employed for HPA MMIC design. The proposed quasi Class-F HPA MMIC, fabricated using ETRI's 0.15 mu m GaN process, achieves an output power of 43.5 similar to 44.5 dBm with a power-added efficiency of 36 similar to 40.7% within the 9.1 similar to 10.3 GHz frequency bandwidth. image

引用

页数：3

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