X-band quasi class-F HPA MMIC using DynaFET GaN HEMT modelling

This paper proposes an X-band quasi Class-F high power amplifier (HPA) monolithic microwave integrated circuit (MMIC) using DynaFET gallium nitride (GaN) high electron mobility transistor (HEMT) modelling. To enhance efficiency, a novel quasi Class-F output matching circuit is proposed. DynaFET modelling for GaN HEMT is utilized for accurate HPA MMIC design. The proposed quasi Class-F HPA MMIC, fabricated using ETRI's 0.15 mu m GaN process, achieves an output power of 43.5 similar to 44.5 dBm with a power-added efficiency of 36 similar to 40.7% within the 9.1 similar to 10.3 GHz frequency bandwidth. This paper introduces a novel X-band quasi Class-F high power amplifier (HPA) monolithic microwave integrated circuit (MMIC) using DynaFET gallium nitride (GaN) high electron mobility transistor (HEMT) modelling. A novel quasi Class-F output matching circuit is proposed to improve efficiency, with DynaFET modelling for GaN HEMT employed for HPA MMIC design. The proposed quasi Class-F HPA MMIC, fabricated using ETRI's 0.15 mu m GaN process, achieves an output power of 43.5 similar to 44.5 dBm with a power-added efficiency of 36 similar to 40.7% within the 9.1 similar to 10.3 GHz frequency bandwidth. image