Enhancing Thermoelectric Performance of n-Type Bi2Te2.7Se0.3 through Incorporation of Amorphous Si3N4 Nanoparticles

被引：0
作者：
Chen, Tao [1 ,2 ]
Li, Shujin [1 ,2 ]
Chen, Ke [1 ,2 ]
Danish, Mazhar Hussain [1 ,2 ]
Liu, Hui [3 ]
Li, Di [1 ,2 ]
Xin, Hongxing [1 ]
Zhang, Yongsheng [4 ]
Zhang, Jian [1 ,2 ]
Qin, Xiaoying [1 ,2 ]
机构：
[1] Chinese Acad Sci, Key Lab Photovolta & Energy Conservat Mat, Inst Solid State Phys, HFIPS, Hefei 230031, Peoples R China
[2] Univ Sci & Technol China, Hefei 230026, Peoples R China
[3] Nanjing Tech Univ, Coll Mat Sci & Engn, Nanjing 210009, Peoples R China
[4] Qufu Normal Univ, Adv Res Inst Multidisciplinary Sci, Qufu 273165, Shandong, Peoples R China
来源：
ACS APPLIED MATERIALS & INTERFACES | 2024年 / 16卷 / 17期
基金：
中国国家自然科学基金;
关键词：
thermoelectric; bismuth telluride alloy; energyfiltering effect; nanoparticles; thermal conductivity; phonon scattering; POWER;
D O I：
暂无
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Bi2Te3-based thermoelectric (TE) materials are the state-of-the-art compounds for commercial applications near room temperature. Nevertheless, the application of the n-type Bi2Te2.7Se0.3 (BTS) is restricted by the comparatively low figure of merit (ZT) and intrinsic embrittlement. Here, we show that through dispersion of amorphous Si3N4 (a-Si3N4) nanoparticles both 14% increase in power factor (at 300 K) and 48% decrease in lattice thermal conductivity are simultaneously realized. The increased power factor comes from enhanced thermopower and reduced electrical resistivity while the reduced lattice thermal conductivity originates mainly from scattering of middle- and low-frequency phonons at the incorporated a-Si3N4 nanoparticles. As a result, a large ZT(max) = 1.19 (at 373 K) and an average ZT(ave) similar to 1.12 (300-473 K) with better mechanical properties are achieved for the BTS/0.25 wt % Si3N4 sample. Present results demonstrate that the incorporation of a-Si3N4 is a promising way to improve TE performance.
引用
收藏
页码：22016 / 22024
页数：9
相关论文
共 51 条
[1]   Enhancing the Thermoelectric Properties via Modulation of Defects in P-Type MNiSn-Based (M = Hf, Zr, Ti) Half-Heusler Materials [J].
Ai, Xin ;
Lei, Binghua ;
Cichocka, Magdalena O. ;
Giebeler, Lars ;
Villoro, Ruben Bueno ;
Zhang, Siyuan ;
Scheu, Christina ;
Perez, Nicolas ;
Zhang, Qihao ;
Sotnikov, Andrei ;
Singh, David J. ;
Nielsch, Kornelius ;
He, Ran .
ADVANCED FUNCTIONAL MATERIALS, 2023, 33 (48)
[2]   Cooling, heating, generating power, and recovering waste heat with thermoelectric systems [J].
Bell, Lon E. .
SCIENCE, 2008, 321 (5895) :1457-1461
[3]   Realizing a 14% single-leg thermoelectric efficiency in GeTe alloys [J].
Bu, Zhonglin ;
Zhang, Xinyue ;
Shan, Bing ;
Tang, Jing ;
Liu, Hongxia ;
Chen, Zhiwei ;
Lin, Siqi ;
Li, Wen ;
Pei, Yanzhong .
SCIENCE ADVANCES, 2021, 7 (19)
[4]   EFFECT OF POINT IMPERFECTIONS ON LATTICE THERMAL CONDUCTIVITY [J].
CALLAWAY, J ;
VONBAEYER, HC .
PHYSICAL REVIEW, 1960, 120 (04) :1149-1154
[5]   Modular Nanostructures Facilitate Low Thermal Conductivity and Ultra-High Thermoelectric Performance in n-Type SnSe [J].
Chandra, Sushmita ;
Bhat, Usha ;
Dutta, Prabir ;
Bhardwaj, Aditya ;
Datta, Ranjan ;
Biswas, Kanishka .
ADVANCED MATERIALS, 2022, 34 (40)
[6]   3D charge and 2D phonon transports leading to high out-of-plane ZT in n-type SnSe crystals [J].
Chang, Cheng ;
Wu, Minghui ;
He, Dongsheng ;
Pei, Yanling ;
Wu, Chao-Feng ;
Wu, Xuefeng ;
Yu, Hulei ;
Zhu, Fangyuan ;
Wang, Kedong ;
Chen, Yue ;
Huang, Li ;
Li, Jing-Feng ;
He, Jiaqing ;
Zhao, Li-Dong .
SCIENCE, 2018, 360 (6390) :778-782
[7]   Enhanced near-room temperature thermoelectric performance and mechanical strength of n-type BiTeSe materials incorporated with Ag2Se inclusions [J].
Chen, K. ;
Chen, T. ;
Ai, L. ;
Ming, H. W. ;
Li, S. J. ;
Zhang, J. ;
Qin, X. Y. ;
Xin, H. X. ;
Song, C. J. ;
Li, D. .
INORGANIC CHEMISTRY FRONTIERS, 2023, 10 (18) :5292-5302
[8]   Enhancing thermoelectric performance of n-type Bi2Te2.7Se0.3 through the incorporation of MnSb2Se4 nanoinclusions [J].
Chen, Tao ;
Qin, Xiaoying ;
Ming, Hongwei ;
Zhang, Xuemei ;
Wang, Ziyuan ;
Yang, Shuhuan ;
Zhang, Yongsheng ;
Ge, Zhenhua ;
Xin, Hongxing ;
Li, Di ;
Zhang, Jian .
CHEMICAL ENGINEERING JOURNAL, 2023, 467
[9]   Enhancing the thermoelectric performance of n-type Bi2Te2.7Se0.3 through the incorporation of Ag9AlSe6 inclusions [J].
Chen, Tao ;
Ming, Hongwei ;
Qin, Xiaoying ;
Zhu, Chen ;
Chen, Yong ;
Ai, Li ;
Li, Di ;
Zhang, Yongsheng ;
Xin, Hongxing ;
Zhang, Jian .
INORGANIC CHEMISTRY FRONTIERS, 2022, 9 (20) :5386-5393
[10]   Improving the power factor and figure of merit of p-type CuSbSe2 via introducing Sb vacancies [J].
Chen, Tao ;
Ming, Hongwei ;
Qin, Xiaoying ;
Zhu, Chen ;
Huang, Lulu ;
Hou, Yunxiang ;
Li, Di ;
Zhang, Jian ;
Xin, Hongxing .
JOURNAL OF MATERIALS CHEMISTRY C, 2021, 9 (41) :14858-14865
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