CPL-active hybrid copper(Ⅰ) halides enabled by cation inclusion with chiral crown-ether

被引:0
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作者
Peng Fan [1 ,2 ,3 ]
LiXuan Cai [2 ,3 ]
XiaoFang Duan [2 ,3 ]
Fan Yin [2 ,3 ]
ChenChen Li [2 ,3 ]
ZhongHua Deng [2 ,3 ]
XiaoZhen Li [1 ,4 ,2 ]
QingFu Sun [1 ,2 ,3 ]
机构
[1] College of Chemistry and Materials Science,Fujian Normal University
[2] State Key Laboratory of Structural Chemistry,Fujian Institute of Research on the Structure of Matter,Chinese Academy of Sciences
[3] Fujian College,University of Chinese Academy of Sciences
[4] Strait Institute of Flexible Electronics (Future Technologies),Fujian Key Laboratory of Flexible Electronics,Fujian Normal University and Strait Laboratory of Flexible
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中图分类号
TB34 [功能材料];
学科分类号
080501 ;
摘要
Chiral hybrid metal halides with high photoluminescence quantum yield(PLQY) and superior dissymmetry factor(glum) are promising candidates for circularly polarized luminescence(CPL) emitting sources.However,it is a great challenge to achieve both high glumand large PLQY.Here,we report a new supramolecular strategy to fabricate chiral hybrid Cu(Ⅰ)-halides with nearunity quantum yields and intense CPL emissions.The dissymmetry factor can be dramatically modulated by tuning the hostguest complexations.Attributing to the chirality and variable conformations of the host-guest complexes,a series of chiral[G@LR/S]2Cu4I6 have been prepared.The incorporation of different cations within the chiral LR/Shosts leads to variations of packing modes along the c-axis and different extent of distortions in the[Cu4I6]2-polyhedra.Among them,[H3O@LR/S]+cations are stacked based on Van der Waals interactions and hierarchically self-assemble into a right/left-handed helix in[H3O@LR/S]2Cu4I6,which results in a high glumof-7×10-3and a large PLQY of 96.92%.Notably,[G@LR/S]2Cu4I6 shows promising applications in single-component white light emitting diodes(WLEDs),exhibiting a maximum dissymmetry factor of -1.2×10-3.The effective host-guest complexation and oriented hierarchical self-assembly provide an effective strategy for the development of high-performance CPL materials.
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页码:3283 / 3290
页数:8
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