GENERAL COMPUTER SIMULATION FORMULAE OF LOW PRESSURE CHEMICAL VAPOR DEPOSITION

<正> Recently, the technique of low pressure chemical vapor deposition （LPCVD） has been used extensively in semiconductor industry because of its extremely favorable economics. Its theoretical work, however, has rarely been reported. After deriving computer simulation for mulae of LPCVD Poly-Si fihns, a set of general computer simulation formulae are derived, which are used successfully in the computer simulation for LPCVD SiO2 and Si3N4. This shows the theoretical simulation method is generally conformable to the technology of LPCVD. Some new rules have been obtained theoretically. They are in favor of improving the technique of LPCVD and of optimizing the design of LPCVD equipments.