共 22 条
- [1] Morin F. J., Oxides which show a metal-to-insulator transition at the Neel temperature, Phys. Rev. Lett, 3, pp. 34-36, (1959)
- [2] De Natale J. F., Hood P. J., Harker A. B., Formation and characterization of grain-oriented VO2 thin films, J. Appl. Phys, 66, 12, pp. 5844-5850, (1989)
- [3] Wang Y., Chai J., Wang S., Qi L., Yang Y., Xu Y., Electrical oscillation in Pt/VO2 bilayer strips, J. Appl. Phys, 117, (2015)
- [4] Chae B., Kim H., Youn D., Kang K., Abrupt metal-insulator transition observed in VO2 thin films induced by a switching voltage pulse, Physica B, 369, pp. 76-80, (2005)
- [5] Wang B., Lai J., Li H., Hu H., Chen S., Nanostructured vanadium oxide thin film with high TCR at room temperature for microbolometer, Infrared Phys. & Tech, 57, pp. 8-13, (2013)
- [6] Yang Z., Ko C., Ramanathan S., Oxide electronics Utilizing Ultrafast Metal-Insulator Transitions, Annu. Rev. Mater. Res, 41, pp. 337-367, (2011)
- [7] Nihei Y., Sasakawa Y., Okimura K., Advantages of inductively coupled plasma-assisted sputtering for preparation of stoichiometric VO2 films with metal-insulator transition, Thin Solid Films, 516, pp. 3572-3574, (2008)
- [8] Wang H., Yi X., Chen S., Low temperature fabrication of vanadium oxide films for uncooled bolometer detectors, Infrared Phys. & Technol, 47, pp. 273-277, (2006)
- [9] Kim D. H., Kwok H. S., Pulsed laser deposition of VO2 thin films, Appl. Phys. Lett, 65, 19, pp. 3188-3190, (1994)
- [10] Yang T-H., Aggarwal R., Gupta A., Zhou H., Narayan R. J., Narayan J., Semiconductor-metal transition characteristics of VO2 thin films grown on c- and r-sapphire substrates, J. Appl. Phys, 107, (2010)