Structural, morphological, spectroscopic, and electrochemical properties of Cr doped ZnAl2O4

被引:1
|
作者
Kumar, K. Kiran [1 ]
Kumar, T. Suresh [1 ]
Reddy, B. Ravinder [2 ]
Chakra, Ch. Shilpa [3 ]
Praveena, K. [4 ]
Katlakunta, S. [1 ]
机构
[1] Osmania Univ, Univ Coll Sci Saifabad, Dept Phys, Hyderabad 500004, India
[2] Osmania Univ, Univ Coll Sci, Dept Phys, Hyderabad 500007, India
[3] Jawaharlal Nehru Technol Univ, Ctr Nano Sci & Technol, Hyderabad, Telangana, India
[4] Palamuru Univ, Dept Phys, Mahabubnagar, Telangana, India
关键词
ZnAl2O4; Nanoparticles; XPS; Energy band gap; Specific capacitance; ZINC ALUMINATE; OPTICAL-PROPERTIES; FACILE SYNTHESIS; HYDROTHERMAL SYNTHESIS; ELECTRONIC-STRUCTURE; SPINEL; NANOCRYSTALLINE; NANOPARTICLES; LUMINESCENCE; PERFORMANCE;
D O I
10.1007/s10971-024-06466-x
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The ZnAl2-xCrxO4 (x = 0.0-0.1) ceramics were synthesized using microwave-hydrothermal method. The as synthesized powders were sintered at 1250 degrees C/4 h. All samples exhibit a cubic crystal structure and belong to Fd-3m space group. The lattice constant (a) increased from 8.085 & Aring; (x = 0.0) to 8.128 & Aring; (x = 0.04) and decreased for higher concentrations. The Fourier transform infrared spectra (FTIR) show tetrahedral and octahedral absorption bands in the region, 400 - 480 cm(-1) and 480 - 682 cm(-1), respectively. The X-ray photoelectron spectroscopy confirmed the valence states of Zn, Al, Cr, and O. The UV-vis spectra reveal a red shift with Cr3+ doping, reducing the bandgap energy (E-g) from 3.66 eV (x = 0.02) to 3.39 eV (x = 0.10). The electrochemical performance of the present samples was investigated using cyclic voltammetry (CV) and galvanostatic charge/discharge (GDC). The sample x = 0.10 exhibits high specific capacity of 143.671 F/g at a scan rate 5 mV/s. Therefore, the present samples may be useful for energy storage devices. Graphical Abstract The tauc plots for x = 0.0-0.10 samples. The UV-vis spectra reveal a red shift with Cr3+ doping, reducing the bandgap energy (Eg) from 3.66 eV (x = 0.02) to 3.39 eV (x = 0.10). [GRAPHICS] .
引用
收藏
页码:794 / 805
页数:12
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