Broadband parasitic modeling of diodes in the millimeter-wave band

This paper presents the extraction of an equivalent circuit model for PIN diodes and varactors in the millimeter waves. This circuit model is handy for new communication applications involving, for example, electronic beam reconfigurability, where diodes are commonly used. For parameter extraction, the proposed model includes the effects of the device, the pads, and the gap underneath the device. From the measurement at various bias points (varactor) or states (PIN diode), it is possible to extract an equivalent circuit to properly model the behavior of these devices when using them to design reconfigurable elements. The results are validated experimentally, obtaining an excellent agreement between the measurements and the equivalent circuit models in a large frequency band up to 67 GHz.