High Performance Self-Powered Photodetectors Based on Graphene Nanoribbons/Al2O3/InGaZnO Heterojunctions

被引：2

作者：

Ye, Xiaoling ^{[1
]}

Zheng, Xiaoxiao ^{[1
]}

Han, Lei ^{[1
]}

Sun, Yu ^{[1
]}

Wang, Liang ^{[1
]}

Li, Ziheng ^{[1
]}

Liu, Wencheng ^{[1
]}

Liu, Benqing ^{[1
]}

Han, Nan ^{[1
]}

Khan, Safia ^{[1
]}

Jafri, Syed Hassan Mujtaba ^{[2
,3
]}

Wang, Mingyang ^{[1
]}

Ning, Yafei ^{[1
,4
]}

Li, Hu ^{[1
,4
]}

机构：

[1] Shandong Univ, Sch Integrated Circuit, Shandong Technol Ctr Nanodevices & Integrat, Jinan 250101, Peoples R China

[2] Mirpur Univ Sci & Technol, Dept Elect Engn, Mirpur Azad 10250, Jammu & Kashmir, Pakistan

[3] Uppsala Univ, Dept Mat Sci & Engn, S-75121 Uppsala, Sweden

[4] Shandong Univ, Shenzhen Res Inst, Shenzhen 518063, Peoples R China

来源：

IEEE PHOTONICS JOURNAL | 2024年 / 16卷 / 03期

关键词：

Graphene nanoribbons; heterojunctions; responsivity; self-powered photodetectors; RAMAN-SPECTROSCOPY; BROAD-BAND; INFRARED PHOTODETECTOR; HIGH RESPONSIVITY; OXIDE;

D O I：

10.1109/JPHOT.2024.3381440

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Self-powered photodetectors which operate without external power sources hold immense promise in future photodetection systems. To achieve high-performance self-powered optoelectronic devices, efficient electron-hole pair separation is critical to generate high photocurrents. In this work, we successfully synthesized semiconducting graphene nanoribbons (GNRs) with a direct bandgap of 1.80 eV and employed them to construct a high-performance GNR/Al2O3/IGZO heterostructure photodetector. The built-in electric field in the heterojunctions enables this photodetector to exhibit remarkable performance, showing a responsivity of up to 68 mA/W, a detectivity of 8.34 x 10(10) Jones, and rapid response times of 21/20 ms at zero bias. Furthermore, the photodetector features a wide spectral detection range of 405 to 1550 nm. These results highlight the promising potential of GNR/IGZO p-n heterojunction-based self-powered photodetectors in optoelectronic applications.

引用

页码：1 / 9

页数：9

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