High Performance Self-Powered Photodetectors Based on Graphene Nanoribbons/Al2O3/InGaZnO Heterojunctions

被引:3
作者
Ye, Xiaoling [1 ]
Zheng, Xiaoxiao [1 ]
Han, Lei [1 ]
Sun, Yu [1 ]
Wang, Liang [1 ]
Li, Ziheng [1 ]
Liu, Wencheng [1 ]
Liu, Benqing [1 ]
Han, Nan [1 ]
Khan, Safia [1 ]
Jafri, Syed Hassan Mujtaba [2 ,3 ]
Wang, Mingyang [1 ]
Ning, Yafei [1 ,4 ]
Li, Hu [1 ,4 ]
机构
[1] Shandong Univ, Sch Integrated Circuit, Shandong Technol Ctr Nanodevices & Integrat, Jinan 250101, Peoples R China
[2] Mirpur Univ Sci & Technol, Dept Elect Engn, Mirpur Azad 10250, Jammu & Kashmir, Pakistan
[3] Uppsala Univ, Dept Mat Sci & Engn, S-75121 Uppsala, Sweden
[4] Shandong Univ, Shenzhen Res Inst, Shenzhen 518063, Peoples R China
来源
IEEE PHOTONICS JOURNAL | 2024年 / 16卷 / 03期
关键词
Graphene nanoribbons; heterojunctions; responsivity; self-powered photodetectors; RAMAN-SPECTROSCOPY; BROAD-BAND; INFRARED PHOTODETECTOR; HIGH RESPONSIVITY; OXIDE;
D O I
10.1109/JPHOT.2024.3381440
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Self-powered photodetectors which operate without external power sources hold immense promise in future photodetection systems. To achieve high-performance self-powered optoelectronic devices, efficient electron-hole pair separation is critical to generate high photocurrents. In this work, we successfully synthesized semiconducting graphene nanoribbons (GNRs) with a direct bandgap of 1.80 eV and employed them to construct a high-performance GNR/Al2O3/IGZO heterostructure photodetector. The built-in electric field in the heterojunctions enables this photodetector to exhibit remarkable performance, showing a responsivity of up to 68 mA/W, a detectivity of 8.34 x 10(10) Jones, and rapid response times of 21/20 ms at zero bias. Furthermore, the photodetector features a wide spectral detection range of 405 to 1550 nm. These results highlight the promising potential of GNR/IGZO p-n heterojunction-based self-powered photodetectors in optoelectronic applications.
引用
收藏
页码:1 / 9
页数:9
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