The Use of GaN RF Switches in High-Power Radio Design

被引：0
|
作者：
Shah, Manish [1 ]
机构：
[1] Tagore Technol Inc, Arlington Hts, IL 60004 USA
来源：
MICROWAVE JOURNAL | 2022年 / 65卷 / 06期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
GaN RF switch technology enables the efficient realization of modern high-power multi-band radios in terms of size, weight and power (SWaP) while significantly reducing complexity.
引用
收藏
页码：46 / 58
页数：13
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