Effect of the properties of chalcopyrite semiconductors on the physical and optical parameters of cell layers with cigs

被引：0
作者：
Rachedi M. [1 ]
Merad A. [2 ]
Lorenzini G. [3 ]
Ahmad H. [4 ]
Menni Y. [1 ]
Ameur H. [5 ]
Sifi I. [1 ]
机构：
[1] Unit of Research on Materials and Renewable Energies, Department of Physics, Faculty of Sciences, Abou Bekr Belkaid University, P.O. Box 119, Tlemcen
[2] Solid State Physics Team, Theoretical Physics Laboratory, Faculty of Sciences, University of Tlemcen, B.P. 119, Tlemcen
[3] Department of Engineering and Architecture, University of Parma, Parco Area delle Scienze, 181/A, Parma
[4] Department of Basic Science, University of Engineering and Technology, Peshawar
[5] Department of Technology, University Centre of Naama, P.O. Box 66, Naama
来源：
Revue des Composites et des Materiaux Avances | 2021年 / 31卷 / 02期
关键词：
Cell layers with CIGS; Chalcopyrite semiconductors; Conversion efficiency; CuInGaSe2 solar cells; Solar materials;
D O I：
10.18280/RCMA.310201
中图分类号：
学科分类号：
摘要：
In this paper, the impact of various buffers of applying components on the effectiveness of CuInGaSe2 solar cells is studied numerically. The SCAPS software is employed to achieve the investigation. The main parameters of the inspected devices are: The photovoltaic conversion effectiveness (η), the filling factor (FF), short-circuit current (Jsc), and open circuit voltage (Voc). These photovoltaic parameters are analyzed vs. the thickness in the various buffer layers under study. The numerical findings revealed that the most significant conversion effectiveness (23.4%) of the CIGS solar cell is obtained with the CdS buffer layer. An attempt is conducted to improve this efficiency by using the SCAPS and by optimizing the two electrical and technological parameters of the three layers (ZnO, CdS, CIGS). © 2021 Lavoisier. All rights reserved.
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页码：65 / 72
页数：7
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