Enhanced Electrical Properties of Bi2-xSbxTe3 Nanoflake Thin Films Through Interface Engineering

被引:5
作者
Wu, Xudong [1 ,2 ]
Ding, Junjie [1 ,2 ]
Cui, Wenjun [1 ,2 ]
Lin, Weixiao [1 ,2 ]
Xue, Zefan [1 ,2 ]
Yang, Zhi [1 ,2 ]
Liu, Jiahui [1 ]
Nie, Xiaolei [2 ]
Zhu, Wanting [2 ]
Van Tendeloo, Gustaaf [2 ,3 ]
Sang, Xiahan [1 ,2 ]
机构
[1] Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China
[2] Wuhan Univ Technol, NRC Nanostruct Res Ctr, Wuhan 430070, Peoples R China
[3] Univ Antwerp, EMAT Electron Microscopy Mat Sci, Groenenborgerlaan 171, B-2023 Antwerp, Belgium
基金
中国国家自然科学基金;
关键词
Bi2Te3; nanoflakes; interface engineering; scanning transmission electron microscopy; thermoelectric thin film; HIGH-THERMOELECTRIC PERFORMANCE; POWER-GENERATION; 2D MATERIALS; GROWTH; BISMUTH; TELLURIDE; NANOPLATELETS; MECHANISMS; NANOSHEETS; MAGNETISM;
D O I
10.1002/eem2.12755
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The structure-property relationship at interfaces is difficult to probe for thermoelectric materials with a complex interfacial microstructure. Designing thermoelectric materials with a simple, structurally-uniform interface provides a facile way to understand how these interfaces influence the transport properties. Here, we synthesized Bi2-xSbxTe3 (x = 0, 0.1, 0.2, 0.4) nanoflakes using a hydrothermal method, and prepared Bi2-xSbxTe3 thin films with predominantly (0001) interfaces by stacking the nanoflakes through spin coating. The influence of the annealing temperature and Sb content on the (0001) interface structure was systematically investigated at atomic scale using aberration-corrected scanning transmission electron microscopy. Annealing and Sb doping facilitate atom diffusion and migration between adjacent nanoflakes along the (0001) interface. As such it enhances interfacial connectivity and improves the electrical transport properties. Interfac reactions create new interfaces that increase the scattering and the Seebeck coefficient. Due to the simultaneous optimization of electrical conductivity and Seebeck coefficient, the maximum power factor of the Bi1.8Sb0.2Te3 nanoflake films reaches 1.72 mW m(-1) K-2, which is 43% higher than that of a pure Bi2Te3 thin film.
引用
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页数:8
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