Planar defects in α-Ga2O3 thin films produced by HVPE

被引：6
作者：
Myasoedov, A. V. [1 ]
Pavlov, I. S. [2 ]
Pechnikov, A. I. [1 ,3 ]
Stepanov, S. I. [1 ,3 ]
Nikolaev, V. I. [1 ,3 ]
机构：
[1] Russian Acad Sci, Ioffe Inst, Moscow, Russia
[2] NRC Kurchatov Inst, Shubnikov Inst Crystallog Kurchatov Complex Crysta, Moscow 119333, Russia
[3] Perfect Crystals LLC, St Petersburg 194223, Russia
来源：
JOURNAL OF APPLIED PHYSICS | 2024年 / 135卷 / 12期
关键词：
EDGE DISLOCATION; CORE STRUCTURE; SAPPHIRE; LAYERS; PHASE; ALPHA-AL2O3; SLIP;
D O I：
10.1063/5.0189133
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The defect structure of alpha-phase gallium oxide thin films was investigated using transmission electron microscopy (TEM). Epitaxial Ga2O3 films were grown via halide vapor-phase epitaxy on c-plane sapphire substrates. TEM analysis revealed a high density of extended planar defects within the films, primarily located along prismatic planes of {1120} type. Displacement vectors were determined using the invisibility criterion for stacking faults. The study encompassed both planar and cross-sectional views of the films. It is hypothesized that these defects form due to the motion of edge partial dislocations with the 1/3 < 1100 > Burgers vector. Various mechanisms of their formation have been explored.
引用
收藏
页数：7
相关论文
共 31 条
[1]   Evolution of corundum-structured III-oxide semiconductors: Growth, properties, and devices [J].
Fujita, Shizuo ;
Oda, Masaya ;
Kaneko, Kentaro ;
Hitora, Toshimi .
JAPANESE JOURNAL OF APPLIED PHYSICS, 2016, 55 (12)
[2]   Wide-bandgap semiconductor materials: For their full bloom [J].
Fujita, Shizuo .
JAPANESE JOURNAL OF APPLIED PHYSICS, 2015, 54 (03)
[3]   The Core Structure of Basal Dislocations in Deformed Sapphire (α-Al2O3) [J].
Heuer, A. H. ;
Jia, C. L. ;
Lagerloef, K. P. D. .
SCIENCE, 2010, 330 (6008) :1227-1231
[4]   Slip and twinning dislocations in sapphire (α-Al2O3) [J].
Heuer, AH ;
Lagerlof, KPD ;
Castaing, J .
PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1998, 78 (03) :747-763
[5]  
Hirsch P. B., 1967, Electron Microscopy of Thin Crystals, V2nd
[6]   Computational study of stacking faults in sapphire using total energy methods [J].
Jhon, MH ;
Glaeser, AM ;
Chrzan, DC .
PHYSICAL REVIEW B, 2005, 71 (21)
[7]   Reduction in edge dislocation density in corundum-structured α-Ga2O3 layers on sapphire substrates with quasi-graded α-(Al,Ga)2O3 buffer layers [J].
Jinno, Riena ;
Uchida, Takayuki ;
Kaneko, Kentaro ;
Fujita, Shizuo .
APPLIED PHYSICS EXPRESS, 2016, 9 (07)
[8]   Progress in α-Ga2O3 for practical device applications [J].
Kaneko, Kentaro ;
Fujita, Shizuo ;
Shinohe, Takashi ;
Tanaka, Katsuhisa .
JAPANESE JOURNAL OF APPLIED PHYSICS, 2023, 62 (SF)
[9]   Evaluation of Misfit Relaxation in α-Ga2O3 Epitaxial Growth on α-Al2O3 Substrate [J].
Kaneko, Kentaro ;
Kawanowa, Hitoshi ;
Ito, Hiroshi ;
Fujita, Shizuo .
JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 51 (02)
[10]   STACKING-FAULT ENERGY IN SAPPHIRE (ALPHA-AL2O3) [J].
LAGERLOF, KDP ;
MITCHELL, TE ;
HEUER, AH ;
RIVIERE, JP ;
CADOZ, J ;
CASTAING, J ;
PHILLIPS, DS .
ACTA METALLURGICA, 1984, 32 (01) :97-105
1234