The Role of Carrier Injection in the Breakdown Mechanism of Amorphous Al2O3 Layers

被引：2

作者：

La Torraca, P. ^{[1
,2
]}

Padovani, A. ^{[3
]}

Strand, J. ^{[4
]}

Shluger, A. ^{[4
]}

Larcher, L. ^{[5
]}

机构：

[1] Univ Modena & Reggio Emilia, Dept Sci & Methods Engn, I-42122 Reggio Emilia, Italy

[2] Univ Coll Cork, Tyndall Natl Inst, Cork 15, Ireland

[3] Univ Modena & Reggio Emilia, Engn Dept Enzo Ferrari, I-42122 Reggio Emilia, Italy

[4] UCL, Dept Phys & Astron, London WC1E 6BT, England

[5] Appl Mat MDLx Italy Res & Dev, I-42122 Reggio Emilia, Italy

来源：

IEEE ELECTRON DEVICE LETTERS | 2024年 / 45卷 / 02期

关键词：

Degradation; Discrete Fourier transforms; Electric fields; Electron traps; Solid modeling; Software; Permittivity; Amorphous alumina; atomic defects; breakdown; carrier injection; high-k dielectric;

D O I：

10.1109/LED.2023.3337882

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigated the dielectric breakdown(BD) mechanism in amorphous alumina (a-Al2O3) metal-insulator-metal (MIM) stacks. Density functional theory(DFT) calculations reveal that oxygen vacancy (VO)generation in a-Al2O3occurs via thermochemical (TC)bond-breaking and, more efficiently, via newly discovered pathways enabled by charge trapping in under-coordinated Al ions (UCAls) and in existing VOs. Multiscale simulations show the importance of these processes, which allowexplaining the experimental BD dynamics in a-Al2O3, and provide valuable insights into the role of carriers' injectionin the degradation and reliability of high-k materials.

引用

页码：236 / 239

页数：4

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