Near-field radiation in BAs and BSb dominated by four-phonon scattering

被引:5
|
作者
Feng, Dudong
Yang, Xiaolong [2 ,3 ]
Han, Zherui
Ruan, Xiulin [1 ]
机构
[1] Purdue Univ, Sch Mech Engn, W Lafayette, IN 47907 USA
[2] Chongqing Univ, Coll Phys, Chongqing 401331, Peoples R China
[3] Chongqing Univ, Ctr Quantum Mat & Devices, Chongqing 401331, Peoples R China
基金
美国国家科学基金会;
关键词
HIGH THERMAL-CONDUCTIVITY; HIGH AMBIPOLAR MOBILITY; LIGHT;
D O I
10.1103/PhysRevB.109.L081409
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Inelastic scattering processes typically introduce friction among carriers and reduce the transport properties of photons, phonons, and electrons. However, we predict that in contrast to the role in reducing thermal conductivity, four-phonon scattering dominates the near-field radiative heat transfer (NFRHT) in both boron arsenide (BAs) and boron antimonide. Including four-phonon scattering results in a nearly 400-fold increase in the total heat flux between two BAs thin films compared to three-phonon scattering alone. This nonintuitive enhancement arises from the large number of NFRHT channels activated by four-phonon scattering, outcompeting the effect of decreased coupling strength of surface phonon polaritons at the resonance frequency. Additionally, we point out that four-phonon scattering decreases NFRHT in certain other systems.
引用
收藏
页数:6
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