Dynamic wetting of low-index diamond planes and polycrystalline diamond with H-terminated and O-terminated surfaces

被引:1
|
作者
Ostrovskaya, Lidia [1 ]
Boinovich, Ludmila [2 ]
Bolshakov, Andrey [3 ]
Popovich, Alexey [3 ,4 ]
Khmelnitskiy, Roman [5 ]
Ralchenko, Victor [3 ,6 ]
机构
[1] Ctr Surface & Vacuum Res, Novatorov Str 40-1, Moscow 119421, Russia
[2] Russian Acad Sci, Inst Phys Chem & Electrochem, Leninsky Ave 31, Moscow 119071, Russia
[3] Russian Acad Sci, Prokhorov Gen Phys Inst, Vavilov Str 38, Moscow 119991, Russia
[4] Russian Acad Sci, Kotelnikov Radioengn & Elect Inst, Vvedensky Sq 1, Moscow 141190, Russia
[5] Russian Acad Sci, Lebedev Phys Inst, Leninsky Ave 53, Moscow 117924, Russia
[6] Harbin Inst Technol, 92 Xidazhi Str, Harbin 150001, Peoples R China
基金
俄罗斯科学基金会;
关键词
Diamond; Crystallographic plane; Wettability; Wetting dynamics; Contact angle; Hydrogenation; Oxidation; Ozone-treatment; BORON-DOPED DIAMOND; WETTABILITY; FILMS; FUNCTIONALIZATION; ENERGY;
D O I
10.1016/j.diamond.2024.110864
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Control of wettability of diamond surfaces is important for many applications, including chemical sensors, electronic devices based on surface conductivity, electrochemistry, biomolecules immobilization. The contact angle for liquid droplet is sensitive to crystallographic orientation of the facet. We report on the wetting dynamics for single crystal diamond (SCD) plates with low -index planes (111), (100), (110), and for polycrystalline diamond (PCD) film with mixed grain orientations, subjected to different surface treatments - hydrogenation, thermal oxidation and UV -ozone exposure. Also, advancing angle of (311) plane in undersaturated vapor conditions was studied. The water spreading kinetics was monitored by measuring temporal dynamics of the contact angle theta at room temperature in a saturated vapor atmosphere for prolonged time, up to 60 h. Depending on surface state it took a few minutes to several hours to approach the equilibrium contact angle. It was shown that the transition from hydrogenated surfaces to thermally oxidized and then to ozonized ones is accompanied by a significant surface hydrophilization of all the facets studied. The oxidized and ozonized surfaces reveal faster dynamics of theta equilibration in comparison with that for H -terminated diamond. The plane orientation noticeably affects the contact angle: the measured difference Delta theta for the diamond planes is significant, especially for ozonized surfaces (Delta theta up to 17(degrees)), as a consequence of the difference in chemical structure and composition for those facets. Finally, the wetting of polished coarse -grain PCD is discussed by taking into account a spread in the grain orientation and pinning effect for the drop spreading on nanosteps on the grain boundaries.
引用
收藏
页数:8
相关论文
共 50 条
  • [1] MESFETs on H-terminated polycrystalline diamond
    Calvani, P.
    Sinisi, F.
    Rossi, M. C.
    Conte, G.
    Giovine, E.
    Ciccognani, W.
    Limiti, E.
    ULIS 2009: 10TH INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION OF SILICON, 2009, : 257 - +
  • [2] Heteroatom Functionalization of H-Terminated Diamond Surfaces
    Li, Chenxi
    Oliveira, Eliezer F.
    Biswas, Abhijit
    Puthirath, Anand B.
    Zhang, Xiang
    Pramanik, Atin
    Garratt, Elias J.
    Neupane, Mahesh R.
    Pate, Bradford B.
    Birdwell, Anthony Glen
    Ivanov, Tony G.
    Terlier, Tanguy
    Vajtai, Robert
    Ajayan, Pulickel M.
    ACS APPLIED MATERIALS & INTERFACES, 2023, 15 (33) : 39980 - 39988
  • [3] Carrier mobility enhancement on the H-terminated diamond surface
    Liu, Jinlong
    Yu, Hua
    Shao, Siwu
    Tu, Juping
    Zhu, Xiaohua
    Yuan, Xiaolu
    Wei, Junjun
    Chen, Liangxian
    Ye, Haitao
    Li, Chengming
    DIAMOND AND RELATED MATERIALS, 2020, 104 (104)
  • [4] FIB in-situ fabrication of pseudo vertical diamond Schottky diode: H-terminated ohmic contact and O-terminated Schottky barrier
    Valendolf, J.
    Leinen, D.
    Alba, G.
    Lloret, F.
    Pinero, J. C.
    Suzuki, M.
    Araujo, D.
    APPLIED SURFACE SCIENCE, 2024, 674
  • [5] H-Terminated Polycrystalline Diamond p-Channel Transistors on GaN-on-Silicon
    Soleimanzadeh, Reza
    Naamoun, Mehdi
    Khadar, Riyaz Abdul
    van Erp, Remco
    Matioli, Elison
    IEEE ELECTRON DEVICE LETTERS, 2020, 41 (01) : 119 - 122
  • [6] Formation Mechanism of the H-terminated Diamond Surface
    Liu Jin-Long
    Liu Sheng
    Guo Jian-Chao
    Hua Chen-Yi
    Chen Liang-Xian
    Wei Jun-Jun
    Hei Li-Fu
    Wang Jing-Jing
    Feng Zhi-Hong
    Liu Qing
    Li Cheng-Ming
    ACTA PHYSICO-CHIMICA SINICA, 2015, 31 (09) : 1741 - 1746
  • [7] Vibrational dynamics of the CH stretching mode of H-terminated diamond surfaces
    Zhigilei, LV
    Srivastava, D
    Garrison, BJ
    SURFACE SCIENCE, 1997, 374 (1-3) : 333 - 344
  • [8] DC and RF performance of surface channel MESFETs on H-terminated polycrystalline diamond
    Calvani, P.
    Corsaro, A.
    Girolami, M.
    Sinisi, F.
    Trucchi, D. M.
    Rossi, M. C.
    Conte, G.
    Carta, S.
    Giovine, E.
    Lavanga, S.
    Limiti, E.
    Ralchenko, V.
    DIAMOND AND RELATED MATERIALS, 2009, 18 (5-8) : 786 - 788
  • [9] Annealing effects in H- and O-terminated P-doped diamond (111) surfaces
    Kumaragurubaran, S.
    Yamada, T.
    Shikata, S.
    DIAMOND AND RELATED MATERIALS, 2008, 17 (4-5) : 472 - 475
  • [10] Degradation effects and origin in H-terminated diamond MESFETs
    De Santi, Carlo
    Pavanello, L.
    Nardo, A.
    Verona, C.
    Rinati, G. Verona
    Meneghesso, G.
    Zanoni, E.
    Meneghini, M.
    TERAHERTZ, RF, MILLIMETER, AND SUBMILLIMETER-WAVE TECHNOLOGY AND APPLICATIONS XIII, 2020, 2020, 11279