Size-driven transition of domain switching kinetics in LiNbO3domain-wall memory

被引：0
|
作者：
Zhang, Wen Di [1 ]
Jiang, Jun [1 ]
Jiang, An Quan [1 ]
机构：
[1] State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai,200433, China
来源：
Journal of Applied Physics | 2022年 / 131卷 / 02期
关键词：
Compendex;
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学科分类号：
摘要：
Domain walls
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