The effect of medium doses electron irradiation on the scattering of charge carriers in YBa2Cu3O7-δ single crystal

被引：0
作者：
Khadzhai, G. Ya. [1 ]
Goulatis, I. [2 ]
Chroneos, A. [2 ,3 ]
Kislitsa, M. V. [1 ]
Kamchatna, S. M. [1 ,4 ]
Feher, A. [5 ]
Vovk, R. V. [1 ,4 ]
机构：
[1] Kharkov Natl Univ, 4 Svobody Sq, UA-61022 Kharkiv, Ukraine
[2] Univ Thessaly, Dept Elect & Comp Engn, Volos 38333, Greece
[3] Imperial Coll London, Dept Mat, London SW7 2BP, England
[4] Ukrainian State Univ Railway Transport, 7 Feierbakh Sq, UA-61050 Kharkov, Ukraine
[5] Safarik Univ, Fac Sci, Ctr Low Temp Phys, Pk Angelinum 9, Kosice 04154, Slovakia
来源：
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2024年 / 35卷 / 17期
关键词：
RESISTIVITY; PSEUDOGAP; ANISOTROPY; YBCO; SUPERCONDUCTORS; CONDUCTIVITY; DEPENDENCE; PRESSURE; DEFECTS; METALS;
D O I：
10.1007/s10854-024-12867-z
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The influence of electron irradiation with energies of 0.5-2.5 MeV with fluences up to 70 x 10(18) cm(-2) on the electrical resistivity in the basal plane of YBa2Cu3O7-delta single crystals in the temperature range from the superconducting transition, T-c, to 300 K has been studied. Such irradiation leads to the appearance of a significant number of defects that cause a decrease in anisotropy, an appreciable increase in phonon scattering, reduction of T-c, and broadening of the superconducting transition. Under the conditions specified, the temperature dependence of electrical resistivity is approximated with high accuracy by the charge carriers' scattering on defects and phonons, and fluctuating conductivity in the Lawrence-Doniach (LD) model. The dependences of approximation parameters on fluence are discussed.
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页数：8
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