Resonant Soft Switching Plasma Power Supply Based on SiC MOSFET

被引：0

作者：

Wang Z. ^{[1
]}

Wu J. ^{[1
]}

Fan W. ^{[1
]}

Ye C. ^{[2
]}

机构：

[1] School of Mechanical and Automotive Engineering, South China University of Technology, Guangzhou, 510640, Guangdong

[2] Shenzhen Advantage Power Limited, Shenzhen, 518000, Guangdong

来源：

Huanan Ligong Daxue Xuebao/Journal of South China University of Technology (Natural Science) | 2019年 / 47卷 / 01期

基金：

中国国家自然科学基金;

关键词：

Efficiency; Plasma power supply; Power density; Resonant converter; SiC MOSFET;

D O I：

10.12141/j.issn.1000-565X.180311

中图分类号：

学科分类号：

摘要：

SiC MOSFET can simplify circuit topology and improve power density and efficiency of power supply. A full bridge resonant converter using a new SiC power device was proposed to promote the upgrading of high-power plasma power supply. The main circuit of the resonant converter adopts LLC Zero Voltage Switching (ZVS) topology, which can enlarge the frequency range of resonant commutation to 260~310kHz. The rated output power of the designed full bridge LLC ZVS resonant converter prototype is 8kW and the output voltage is 270V. The driving performance, commutation process, temperature rise and efficiency of the 8kW SiC MOSFET full-bridge LLC ZVS resonant converter prototype were tested. The results show that the developed resonant soft-switching plasma power supply is of good performance and high reliability, and both its efficiency and power density are better than those of the traditional LLC resonant converter using Si MOSFET. © 2019, Editorial Department, Journal of South China University of Technology. All right reserved.

引用

页码：1 / 6

页数：5

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