Electronic signal for mechanical failure in two-dimensional g-SiC

被引:0
|
作者
Li, Jing [1 ]
Shi, Tan [1 ]
Lu, Chenyang [1 ]
Peng, Qing [2 ,3 ,4 ]
机构
[1] Xi An Jiao Tong Univ, Sch Nucl Sci & Technol, Xian 710049, Peoples R China
[2] Chinese Acad Sci, Inst Mech, State Key Lab Nonlinear Mech, Beijing 100190, Peoples R China
[3] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
[4] Guangdong Aerosp Res Acad, Guangzhou 511458, Peoples R China
基金
中国国家自然科学基金;
关键词
instability; mechanical properties; electronic properties; two-dimensional SiC; first-principles calculations; mechanical failure; SILICON-CARBIDE; AB-INITIO; MONOLAYER; GRAPHENE; GEC;
D O I
10.1088/1361-6641/ad40c7
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
It is non-trivial to identify mechanical failure using first-principles calculations as only long-wave phonons are used in these models due to size limitations. Here, we propose a new criterion to predict the mechanical failure by electronic bandgap closure in graphene-like two-dimensional silicon carbide (g-SiC) monolayer. The electronic bandgap decreases with strain and closes beyond the ultimate strain. This mechano-electronic coupling suggests that the onset of the zero bandgap and the correlation between electronic bandgap and ultimate strain could be used to predict the ideal mechanical failure of g-SiC monolayers.
引用
收藏
页数:5
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