Active Gate Driver for SiC MOSFET Based on Switching Transient Feedback

被引：0
|
作者：
Liu P. [1 ]
Chen Z. [1 ]
Miao Y. [1 ]
Yang J. [1 ]
Li W. [1 ]
机构：
[1] College of Electrical and Information Engineering, Hunan University, Changsha
来源：
Diangong Jishu Xuebao/Transactions of China Electrotechnical Society | 2022年 / 37卷 / 17期
关键词：
active gate drive; current overshoot; gate current; SiC MOSFET; voltage overshoot;
D O I：
10.19595/j.cnki.1000-6753.tces.211068
中图分类号：
学科分类号：
摘要：
Due to the influence of internal parasitic parameters and junction capacitance, silicon carbide (SiC) power devices have great voltage and current overshoot and high-frequency switching oscillation in the process of high-speed switching, which seriously affects the operation reliability of SiC-based converters. In this paper, firstly, switching characteristics of SiC MOSFET are deeply analyzed to reveal the mathematical relationship between gate driving current and voltage and current overshoot. Then, a new active gate drive circuit with variable driving current is proposed. The gate current is actively regulated in the current or voltage rising stage of the switching process to suppress voltage and current overshoot and oscillation through the direct detection and feedback of the transient drain current change rate dId/dt, drain-source voltage change rate dVds/dt and driving voltage of SiC MOSFET Vgs. Finally, experimental results show that the proposed method can effectively reduce voltage and current overshoot by 30%~50%, suppress the oscillation and electromagnetic interference, and improve the operation reliability of SiC MOSFET converter. © 2022 Chinese Machine Press. All rights reserved.
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页码：4446 / 4457
页数：11
相关论文
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