Wide-Aperture Diode Laser with Vertical Cavity

被引：0

作者：

Bezotosnyi, V. V. ^{[1
]}

Bogatov, A. P. ^{[1
]}

Drakin, A. E. ^{[1
]}

Mikaelyan, G. T. ^{[2
]}

机构：

[1] Russian Acad Sci, Lebedev Phys Inst, Moscow 119991, Russia

[2] LLC NPP Inzhekt, Saratov 410033, Russia

来源：

PHYSICS OF WAVE PHENOMENA | 2024年 / 32卷 / 03期

关键词：

diode laser with vertical cavity;

D O I：

10.3103/S1541308X24700237

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A new type of diode laser with a scalable (fundamentally unlimited) aperture for the output optical beam has been proposed and calculated. Such an aperture can be implemented due to the use of a vertical cavity with one of the mirrors in the form of a surface diffraction grating. The threshold current density and differential efficiency of the proposed laser are calculated for the material parameters characteristic of the InGaAs/AlGaAs heterostructure and the spectral range at 0.98 mu m.

引用

页码：249 / 255

页数：7

共 5 条

[1] SEMICONDUCTOR LASERS WITH LIGHT OUTPUT THROUGH DIFFRACTION GRATING ON SURFACE OF WAVEGUIDE LAYER [J].

ALFEROV, ZI ;

ANDREYEV, VM ;

GUREVICH, SA ;

KAZARINOV, RF ;

LARIONOV, VR ;

MIZEROV, MN ;

PORTNOY, EL .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1975, QE11 (07) :449-451

[2] Efficiency of and intensity distribution in a semiconductor laser operating in the 'leaky' regime [J].

Bogatov, AP ;

Drakin, AE ;

Shveikin, VI .

QUANTUM ELECTRONICS, 1999, 29 (01) :28-32

[3] LEAKY WAVE ROOM-TEMPERATURE DOUBLE HETEROSTRUCTURE GAAS - GAALAS DIODE-LASER [J].

SCIFRES, DR ;

STREIFER, W ;

BURNHAM, RD .

APPLIED PHYSICS LETTERS, 1976, 29 (01) :23-25

[4]

Shveikin V. I., 1998, RF Patent, Patent No. [2134007C1, 2134007]

[5] Semiconductor lasers emitting at the 0.98 μm wavelength with radiation coupling-out through the substrate [J].

Zvonkov, NB ;

Zvonkov, BN ;

Ershov, AV ;

Uskova, EA ;

Maksimov, GA .

QUANTUM ELECTRONICS, 1998, 28 (07) :605-607

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