4H-SiC/SiO2 Interface Degradation in 1.2 kV 4H-SiC MOSFETs Due to Power Cycling Tests

Power cycling tests (PCTs) assess the reliability of power devices by closely simulating their operating conditions. A PCT was performed on commercially available 1.2 kV 4H-SiC power metal-oxide-semiconductor field-effect transistors to observe its impact on the 4H-SiC/SiO2 interface. High-resolution transmission electron microscopy and electron energy loss spectroscopy measurements showed variations in the length of the 4H-SiC/SiO2 transition layer, depending on whether the device was power cycled. Moreover, the total resistance at V-g >> V-t in R-tot - (V-g-V-t)(-1) graph increased to 16.5%, while it changed more radically to 47.3% at V-g approximate to V-t. The threshold voltage shifted negatively. These variations cannot be expected solely through the wearout of the package.