A Micro SOI Pressure Sensor With Compensation Hole for High Temperature Applications

被引:3
作者
Liu, Fangting [1 ]
He, Feng [1 ]
Tang, Xin [1 ]
Li, Junhui [1 ]
机构
[1] Cent South Univ, Sch Mech & Elect Engn, State Key Lab High Performance Complex Mfg, Changsha 410083, Peoples R China
来源
IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY | 2024年 / 14卷 / 03期
关键词
Finite-element analysis; high-temperature; leadless package; pressure sensor; silicon on insulator (SOI); structure design; DESIGN; SENSITIVITY; FABRICATION;
D O I
10.1109/TCPMT.2024.3371419
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In order to accurately measure the working pressure parameters of various levels of gas and lubricating oil in aviation engines, each engine requires a large number of pressure sensors that are small in size and can work stably in high-temperature environments. The maximum theoretical operating temperature of the silicon on insulator (SOI) pressure sensor is 500(degrees)C, and this article uses a SOI substrate with a design of the pressure-sensitive core body of a 1.75 x 1.75 mm small size, and semi open loop bridge is sealed with a lead-free sensor through anodic bonding and silver paste sintering filled in the hole. The experimental results show that the original output relative error of the sensor is relatively large, and the output after resistance compensation has good linearity and low-temperature drift error, which can achieve low-cost and high-precision point pressure measurement.
引用
收藏
页码:351 / 358
页数:8
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