High Stable Micro Green Light-emitting Diodes Based on ZnO∶Ga/InGaN Heterojunction

被引：0

作者：

Lin, Yi ^{[1
]}

Zhou, Lei ^{[1
]}

Fan, Bao-Lu ^{[1
]}

Yu, Yan-Long ^{[1
]}

Xu, Chun-Xiang ^{[2
]}

机构：

[1] Faculty of Mathematics and Physics, Huaiyin Institute of Technology, Huaian,223003, China

[2] School of Biological Science and Medical Engineering, Southeast University, Nanjing,210096, China

来源：

Faguang Xuebao/Chinese Journal of Luminescence | 2022年 / 43卷 / 12期

基金：

中国国家自然科学基金;

关键词：

Electroluminescence - Gallium - Gallium alloys - Gallium compounds - Gold - Heterojunctions - II-VI semiconductors - III-V semiconductors - Indium alloys - Light emitting diodes - Quantum efficiency - Semiconductor alloys - Visible light communication;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Light sources with wavelengths in the green region are very important for a wide gamut of applications，including solid-state lighting，visible light communications，agriculture，optogenetics，and so on. Compared to blue light-emitting diodes（LEDs），the fabrication of high-performance low-dimensional green LED has long been limited byGreen gapandEfficiency droop. In this work，a kind of green LED composed of p-type InGaN layers and a single Ga doped ZnO microwire （ZnO∶Ga MW）was designed. The experiment results indicated that this LED device had a central wavelength located at 540 nm and a linewidth of about 32 nm. Most important of all，increasing the operating current at high level，no noticeable variations in the electroluminescence characteristics and relative external quantum efficiency（REQE）could be observed. Additionally，a cladding of Au nanofilm was introduced on the surface of microwire to optimize the interface quality of n-ZnO∶Ga MW/p-InGaN heterojunction，resulting in the better uniform contact between ZnO∶Ga and InGaN，and the higher output intensity. This work demonstrates that such heterojunction composed of n-ZnO∶Ga and p-InGaN is a promising candidate for fabricating a new generation of high-brightness microscale green LEDs. © 2022 Chines Academy of Sciences. All rights reserved.

引用

页码：1965 / 1973