Twist angle-dependent transport properties of twisted bilayer graphene

Twisted bilayer graphene (tBLG) with small twist angles has attracted significant attention because of its unique electronic properties arising from the formation of a moir & eacute; superlattice. In this study, we systematically characterized the twist-angle-dependent electronic and transport properties of tBLG grown via chemical vapor deposition. This characterization included parameters such as the charge-neutral point voltage, carrier concentration, resistance, and mobility, covering a wide range of twist angles from 0 degrees to 30 degrees. We experimentally demonstrated that these parameters exhibited twist-angle-dependent moir & eacute; period trends, with high twist angles exceeding 9 degrees, revealing more practically useful features, including improved mobilities compared to those of single-layer graphene. In addition, we demonstrated that the doping states and work functions were weakly dependent on the twist angles, as confirmed by additional first-principles calculations. This study provides valuable insights into the transport properties of tBLG and its potential for practical applications in the emerging field of twistronics. We systematically characterized the twist-angle-dependent electronic and transport properties of twisted bilayer graphene (tBLG) grown via chemical vapor deposition. Parameters such as charge-neutral point voltage, carrier concentration, resistance, and mobility were examined across a wide range of twist angles from 0 degrees to 30 degrees. Our experimental results demonstrated that these parameters exhibited twist-angle-dependent trends corresponding to the moir & eacute; period. Notably, high twist angles exceeding 9 degrees displayed practically useful features, including improved mobilities compared to single-layer graphene. Additionally, we found that the doping states and work functions showed weak dependence on the twist angles, a finding corroborated by first-principles calculations.