Trimmable bandgap reference circuit with exponential curvature compensation

被引:0
作者
Chen H.-Z. [1 ]
Chu F. [1 ,2 ]
Lu W.-T. [2 ]
Zhang T.-L. [2 ]
Li W.-C. [3 ]
Gao W. [4 ]
机构
[1] College of Economics and Management, Nanjing University of Aeronautics and Astronautics, Nanjing
[2] Beijing Microelectronics Technology Institute, Beijing
[3] Institute of Semiconductors, Chinese Academy of Sciences, Beijing
[4] The Ninth Academy of China Aerospace Science and Technology Corporation, Beijing
关键词
Bandgap reference; Exponential curvature compensation; Temperature coefficient (TC); Trimmable;
D O I
10.1016/j.jnlest.2023.100216
中图分类号
学科分类号
摘要
This paper proposes an improved exponential curvature-compensated bandgap reference circuit to exploit the exponential relationship between the current gain β of the bipolar junction transistor (BJT) and the temperature as well as reduce the influence of resistance-temperature dependency. Considering the degraded circuit performance caused by the process deviation, the trimmable module of the temperature coefficient (TC) is introduced to improve the circuit stability. The circuit has the advantages of simple structure, high linear stability, high TC accuracy, and trimmable TC. It consumes an area of 0.09 ​mm2 when fabricated by using the 0.25-μm complementary metal-oxide-semiconductor (CMOS) process. The proposed circuit achieves the simulated power supply rejection (PSR) of about −78.7 ​dB@1 ​kHz, the measured TC of ∼4.7 ​ppm/°C over a wide temperature range from −55 ​°C to 125 ​°C with the 2.5-V single-supply voltage, and the tested line regulation of 0.10 ​mV/V. Such a high-performance bandgap reference circuit can be widely applied in high-precision and high-reliability electronic systems. © 2023 The Authors
引用
收藏
相关论文
共 18 条
[1]  
Li P.-Z., Liu N.-Q., Chen D.-G., A simple bandgap reference based on V<sub>GO</sub> extraction with single-temperature trimming, Proc. of IEEE Intl. Symposium on Circuits and Systems, Seville, pp. 1-5, (2020)
[2]  
Widlar R.J., New developments in IC voltage regulators, IEEE J. Solid State Circ., 6, 1, pp. 2-7, (1971)
[3]  
Kuijk E.K., A precision reference voltage source, IEEE J. Solid State Circ., 8, 3, pp. 222-226, (1973)
[4]  
Brokaw A.P., A simple three-terminal IC bandgap reference, IEEE J. Solid State Circ., 9, 6, pp. 388-393, (1974)
[5]  
Wadhwa S.K., Chaudhry N., High accuracy, multi-output bandgap reference circuit in 16 nm FinFet, Proc. of 30th Intl. Conf. on VLSI Design and 16th Intl. Conf. on Embedded Systems, pp. 259-262, (2017)
[6]  
Andreou C.M., Koudounas S., Georgiou J., A novel wide-temperature-range, 3.9 ppm/°C CMOS bandgap reference circuit, IEEE J. Solid State Circ., 47, 2, pp. 574-581, (2012)
[7]  
Peng K., Xu Y., Design of low-power bandgap voltage reference for IoT RFID communication, Proc. of IEEE 3rd Intl. Conf. on Integrated Circuits and Microsystems, Shanghai, pp. 345-348, (2018)
[8]  
Chen H.-M., Lee C.C., Jheng S.H., Chen W.C., Lee B.Y., A sub-1 ppm/°C precision bandgap reference with adjusted-temperature-curvature compensation, IEEE T. Circuits-I, 64, 6, pp. 1308-1317, (2017)
[9]  
Ji Y., Jeon C., Son H., Kim B., Park H.J., Sim J.Y., 5.8 A 9.3 nW all-in-one bandgap voltage and current reference circuit, Proc. of IEEE Intl. Solid-State Circuits Conf., San Francisco, pp. 100-101, (2017)
[10]  
Lee I., Kim G., Kim W., Exponential curvature-compensated BiCMOS bandgap references, IEEE J. Solid State Circ., 29, 11, pp. 1396-1403, (1994)