Degradation Mechanisms of Gate Leakage in GaN-Based HEMTs at Low Dose Rate Irradiation

被引：0

作者：

Li, Xiaolong ^{[1
]}

Wang, Xin ^{[1
]}

Liu, Mohan ^{[1
]}

Zhu, Kunfeng ^{[2
]}

Shui, Guohua ^{[2
]}

Zheng, Qiwen ^{[1
]}

Cui, Jiangwei ^{[1
]}

Lu, Wu ^{[1
]}

Li, Yudong ^{[1
]}

Guo, Qi ^{[1
]}

机构：

[1] Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Key Laboratory of Functional Materials and Devices for Special Environments, Ürümqi,830011, China

[2] Science and Technology on Analog Integrated Circuit Laboratory, Chongqing,400000, China

来源：

IEEE Access | 2024年 / 12卷

关键词：

Degradation;

D O I：

暂无

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学科分类号：

摘要：

In this paper, we investigated an experimental analysis of the degradation caused by low dose rate irradiation in GaN-based high-electron-mobility transistors (HEMTs) with a p-type gate. Combined with experimental frequency-dependent conductance (Gp/?) analyses and TCAD simulations, it has been demonstrated that the negative shifts in both Id-Vgs and Vth are primarily due to the formation of donor-like traps near the p-GaN/AlGaN interface, which is a result of the dehydrogenation of pre-existing defects during low dose rate irradiation. Additionally, the results of the TCAD simulations, indicate that the trap-assisted tunneling (TAT) process, which involves the recombination of trap-assisted holes with electrons in the p-GaN layer, may dominate the physical mechanisms responsible for the increase in gate leakage current (Ig-Vgs). These results may provide a basis for understanding the role of radiation-induced traps on electrical parameters degradations for p-GaN gate HEMTs. © 2013 IEEE.

引用

页码：35410 / 35416