PERFORMANCE DEGRADATION ANALYSIS OF TRIPLE JUNCTION GaAs SOLAR CELLS UNDER PROTON IRRADIATION

被引：0
作者：
Sun H. [1 ]
Hao J. [1 ]
Zhao Q. [2 ]
Fan J. [1 ]
Zhang F. [2 ]
Dong Z. [2 ]
机构：
[1] School of Electrical and Electronics Engineering, North China Electric Power University, Beijing
[2] Institute of Applied Physics and Computational Mathematics, Beijing
来源：
Taiyangneng Xuebao/Acta Energiae Solaris Sinica | 2023年 / 44卷 / 07期
关键词：
GaAs; lattice defect; proton irradiation; quantum efficiency; solar cells;
D O I：
10.19912/j.0254-0096.tynxb.2022-0350
中图分类号：
学科分类号：
摘要：
The irradiation simulation analysis of protons with different energy for three junction GaAs solar cells is of great significance to the on orbit service evaluation of the cells. In this study，a three junction GaAs solar cell model is constructed，and the performance degradation of the cell under proton irradiation with different energy is simulated；Combined with the interaction between proton and battery target，a battery irradiation damage evaluation method combining micro damage mechanism with macro battery performance change was established. The results show that in the three junction GaAs battery，the proton irradiation with 70 keV energy has the greatest influence on the junction region of the battery，resulting in the most obvious changes in quantum efficiency QE and parallel resistance. Proton irradiation with 40 keV energy has the least impact on the medium battery，while proton irradiation with 100 keV and 150 keV energy mainly affects the base area of the medium battery，resulting in the most obvious change of series resistance of the battery. © 2023 Science Press. All rights reserved.
引用
收藏
页码：129 / 134
页数：5
相关论文
共 16 条
  • [1] SHEN H J, ZHANG R, ZHANG T Y., Absorption analysis of polycrstalline silicon thin film solar cell consisting of irregularly shaped DBR［J］, Acta energiae solaris sinica, 36, 5, pp. 1141-1144, (2015)
  • [2] TANG X X, LUO W Y, WANG C Z，, Et al., Non-ionizing energy loss of low energy proton in semiconductor materials Si and GaAs［J］, Acta physica sinica, 57, 2, pp. 1266-1270, (2008)
  • [3] ZHAN F F., Study of defects in proton irradiated GaAs/ AlGaAs solar cells［D］, (2009)
  • [4] Electrical characterization of electron and proton-induced defects in p + n GaAs photodiodes：EBIC study, 2010 35th IEEE Photovoltaic Specialists Conference, (2010)
  • [5] FANG L, Et al., Effects of proton irradiation on upright metamorphic GaInP/GaInAs/Ge triple junction solar cells［J］, Solar energy materials and solar cells： an international journal devoted to photovoltaic， photothermal， and photochemical solar energy conversion, 185, pp. 36-44, (2018)
  • [6] GAO X, YANG S S，, FENG Z Z，, Et al., Study on displacement damage effects of space triple- junction gaas solar cells ［J］, Acta energiae solaris sinica, 41, 2, pp. 290-295, (2020)
  • [7] GEE J M., A comparison of different module configurations for multi-band-gap solar cells［J］, Solar cells, 24, 1-2, pp. 147-155, (1988)
  • [8] LI J W, WANG Z J，, SHI C，, Et al., Modeling and simulating of radiation effects on the performance degradation of GaInP/GaAs/Ge triple- junction solar cells induced by different energy protons［J］, Acta physica sinica, 69, 9, pp. 295-305, (2020)
  • [9] BAI Y R, XIE F，, Et al., Geant4 simulation of displacement damage induced by proton irradiation in InP ［J］, Journal of terahertz science and electronic information technology, 19, 1, pp. 176-180, (2021)
  • [10] INGUIMBERT C，, MESSENGER S., Equivalent displacement damage dose for on-orbit space applications ［J］, IEEE transactions on nuclear science, 59, 6, pp. 3117-3125, (2013)
12