Structural and optical properties of Cu2ZnSnSe4 nanocrystals thin film

被引：4

作者：

Kisnisci, Zeynep ^{[1
]}

Ozel, Faruk ^{[2
]}

Tugluoglu, Nihat ^{[3
]}

Yuksel, Omer Faruk ^{[1
]}

机构：

[1] Selcuk Univ, Fac Sci, Dept Phys, Konya, Turkiye

[2] Karamanoglu Mehmetbey Univ, Fac Engn, Dept Met & Mat Engn, Karaman, Turkiye

[3] Giresun Univ, Fac Engn, Dept Energy Syst Engn, Gure Campus, Giresun, Turkiye

来源：

OPTICAL AND QUANTUM ELECTRONICS | 2024年 / 56卷 / 07期

关键词：

CZTSe thin film; Refractive index; Extinction coefficient; Dielectric constant; Oscillator energy; Dispersion energy; SOLAR-CELLS; PERFORMANCE; CZTS; LAYERS;

D O I：

10.1007/s11082-024-07136-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we analyzed the structural and optical properties of quaternary semiconductor Cu2ZnSnSe4 (CZTSe) thin film. For this purpose, the structural properties of CZTSe thin film were analyzed using X-ray diffraction (XRD) and transmission electron microscopy (TEM). CZTSe nanocrystals (NCs) were formed in the kesterite phase and with good crystallinity. Optical characterization of thin film was investigated using spectroscopic measurements. Optical parameters of CZTSe film coated using the spin coating technique were determined by UV-Vis-NIR spectroscopy. The refractive index, extinction coefficient, and dielectric constant of the thin film were calculated using transmittance and reflectance data. Moreover, dispersion parameters such as oscillator energy, and dispersion energy were obtained by the Wemple DiDomenico model. For CZTSe film in the visible wavelength region, the transmission has values of 70-75%. The thin film of CZTSe has a direct band gap of 1.4 eV which is suitable for absorbed layer for solar cell.

引用

页数：15

共 35 条

[1] Determination of band gap energy (Eg) of Cu2ZnSnSe4 thin films: On the discrepancies of reported band gap values [J].