Influence of Etching Modes on the Morphology and Composition of the Surface of Multilayer Porous Silicon

被引：0

作者：

Lenshin, A. S. ^{[1
,2
]}

Peshkov, Ya. A. ^{[1
]}

Chernousova, O. V. ^{[2
]}

Barkov, K. A. ^{[1
]}

Kannykin, S. V. ^{[1
]}

机构：

[1] Voronezh State Univ, Voronezh 394018, Russia

[2] Voronezh State Univ Engn Technol, Voronezh 394000, Russia

来源：

SEMICONDUCTORS | 2024年 / 58卷 / 02期

基金：

俄罗斯科学基金会;

关键词：

porous silicon; X-ray reflectometry; porosity; SPECTROSCOPY;

D O I：

10.1134/S106378262402009X

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Based on X-ray reflectometry and ultrasoft X-ray spectroscopy data, the opportunity of controlling surface porosity using multi-stage electrochemical etching modes is presented. It is presented how, with an increase in the porosity index of the near-surface layer, the morphology changes and the degree of oxidation of multilayer porous silicon samples increases.

引用

页码：145 / 148

页数：4

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