Erratum: Study of device characteristics of intrinsic Josephson junction terahertz emitters related to annealing conditions of the crystals (J. Appl. Phys. (2023) 133 (163904) DOI: 10.1063/5.0137830)

被引：0

作者：

Nakagawa, S. ^{[1
,2
]}

Shizu, T. ^{[1
]}

Imai, T. ^{[1
]}

Nakayama, M. ^{[1
,2
]}

Kim, J. ^{[1
]}

Minami, H. ^{[1
,3
]}

Kadowaki, K. ^{[1
]}

Tsujimoto, M. ^{[4
]}

Nakao, H. ^{[5
]}

Eisaki, H. ^{[2
]}

Ishida, S. ^{[2
]}

Mochiku, T. ^{[6
]}

Hasegawa, Y. ^{[7
]}

Kashiwagi, T. ^{[1
,3
]}

机构：

[1] Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai Ibaraki, Tsukuba,305-8573, Japan

[2] Research Institute for Advanced Electronics and Photonics, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono Ibaraki, Tsukuba,305-8568, Japan

[3] Division of Materials Science, Institute of Pure and Applied Sciences, University of Tsukuba, 1-1-1, Tennodai Ibaraki, Tsukuba,305-8573, Japan

[4] Research Center for Emerging Computing Technologies, National Institute of Advanced Industrial Science and Technology (AIST), Central2, 1-1-1 Umezono Ibaraki, Tsukuba,305-8568, Japan

[5] Photon Factory, Institute of Materials Structure Science, High Energy Accelerator Research Organization (KEK), Ibaraki, Tsukuba,305-0801, Japan

[6] National Institute for Materials Science (NIMS), 1-2-1 Sengen Ibaraki, Tsukuba,305-0047, Japan

[7] The Institute for Solid State Physics, The University of Tokyo, 5-1-5 Kashiwa-no-ha, Chiba, Kashiwa,277-8581, Japan

来源：

Journal of Applied Physics | 2023年 / 133卷 / 20期

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D O I：

209901

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