Promoting effect of lanthanum doping on photovoltaic performance of CZTSSe solar cells

被引：3

作者：

Luo, Zhengjun ^{[1
]}

Yu, Lei ^{[1
]}

Zheng, Tingting ^{[1
]}

Dong, Xiaofei ^{[1
]}

Yang, Fengxia ^{[1
]}

Chen, Jiangtao ^{[1
]}

Zhang, Xuqiang ^{[1
]}

Zhao, Yun ^{[1
]}

Li, Yan ^{[1
]}

机构：

[1] Northwest Normal Univ, Coll Phys & Elect Engn, Key Lab Atom & Mol Phys & Funct Mat Gansu Prov, Lanzhou 730070, Peoples R China

来源：

JOURNAL OF CHEMICAL PHYSICS | 2024年 / 160卷 / 16期

基金：

中国国家自然科学基金;

关键词：

THIN-FILMS; CU2ZNSNS4; EFFICIENT; DEFECTS;

D O I：

10.1063/5.0204906

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A large open-circuit voltage (V-OC) deficit is the major challenge hindering the efficiency improvement of Cu2ZnSn(S,Se)(4) (CZTSSe) solar cells. Cation substitution, or doping, is usually an effective strategy to achieve carrier regulation and improve efficiency. In this work, we developed a rare-earth element lanthanum (La) doped CZTSSe thin-film solar cell by directly introducing La3+ ions into the CZTS precursor solution. Such a proposed La doping approach could effectively enhance light harvesting, adjust the bandgap, and increase the electron diffusion length. Furthermore, appropriate concentrations of La doping can reduce harmful defect cluster. Benefiting from the La doping, the V-OC significantly increases from 431 to 497 mV. Consequently, the power conversion efficiency is enhanced significantly from 6.54% (V-OC = 431 mV, J(SC) = 25.50 mA/cm(2), FF = 58.28%) for the reference cell to 10.21% (V-OC = 497 mV, J(SC) = 35.20 mA/cm(2), FF = 58.41%) for the optimized La-doped cell. This research provides a new direction for enhancing the performance of CZTSSe cells, offering promising prospects for the future of CZTSSe thin-film solar cells.

引用

页数：9

共 45 条

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