Exploration of structural and dielectric properties of orthorhombic Ta2O5 nanoplatelets towards the potential optoelectronic devices

The dielectric characteristics of tantalum pentoxide (Ta2O5) nanostructures, synthesized by hydrothermal process, have been investigated in the temperature range of 80 K to 400 K and frequency range of 20 Hz to 2 MHz. X-ray diffraction (XRD) confirms the formation of highly crystalline and orthorhombic phase of the nanostructures sintered at 950 degrees C. The electron microscope images reveal that the synthesized nanostructures change their morphology to nanoplatelets upon increasing the sintering temperature. Further, UV-visible absorbance, FTIR and Raman spectra of the synthesized nanostructures were obtained to investigate their optical properties. The experimentally obtained dielectric results indicate that both the dielectric constant (epsilon) and dielectric loss (D) values increase with increasing operating temperature. Also, the dielectric constant increases to 20 while the dielectric loss decreases to <0.025 at room temperature on increasing the sintering temperature. At 300 K and 1 kHz, the value of epsilon becomes almost twice that of as-synthesized nanostructures i.e. from 10 to 20 on increasing the sintering temperature to 950 degrees C. The enhancement in dielectric constant can be justified by the thermally activated orientational and interfacial polarization associated with the increase in the grain size of the Ta2O5 nanoplatelets at higher sintering temperatures. Furthermore, the frequency dependence of epsilon indicates the high effect of the distribution of relaxation time in the Ta2O5 nanoplatelets at lower frequencies. Overall, this study provides a better understanding of the structural and dielectric behaviour of Ta2O5 nanostructures in correlation with varying sintering temperature. The results suggest that the orthorhombic Ta2O5 nanoplatelets have potential applications as alternative dielectric materials in various electronic and optoelectronic devices.