Dipole modification of the surface electronic structure of III-V semiconductors

A simple electrostatic model is proposed to account for the effect of dipoles associated with surface chemical bonds on the electronic structure of the semiconductor surface. In accordance with the model, the formation of the dipolar surface chemical bonds can change the width of the surface depletion layer leaving the surface band bending nearly intact. In addition, the surface dipoles can redistribute charge localized at surface states, which can modify surface recombination velocity of the semiconductor. The model can explain recently obtained experimental data on the electronic passivation of n-InP(100) surface with different sulfide solutions.