Formation of InAs Nanoislands on Silicon Surfaces and Heterostructures Based on Them

被引：0

作者：

Ilkiv, I. V. ^{[1
,2
]}

Lendyashova, V. V. ^{[1
,3
]}

Borodin, B. B. ^{[3
]}

Talalaev, V. G. ^{[4
]}

Shugabaev, T. ^{[1
]}

Reznik, R. R. ^{[2
]}

Cirlin, G. E. ^{[1
,5
]}

机构：

[1] Alferov Univ, St Petersburg 194021, Russia

[2] St Petersburg State Univ, St Petersburg 199034, Russia

[3] Ioffe Inst, St Petersburg 194021, Russia

[4] Martin Luther Univ Halle Wittenberg, D-06108 Halle, Germany

[5] ITMO Univ, St Petersburg 197101, Russia

来源：

SEMICONDUCTORS | 2024年 / 58卷 / 03期

关键词：

Quantum dots; molecular beam epitaxy; semiconductors; silicon; heterostructures; QUANTUM DOTS; OPTICAL-PROPERTIES;

D O I：

10.1134/S1063782624030059

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Experimental results of studying the InAs islands formation of silicon surface by molecular beam epitaxy are presented. It has been found that, InAs islands with both bimodal and uniform size distributions can be formed depending on the Si surface relief and the presence of nanopits. The possibility of fabricating heterostructures with InAs quantum dots demonstrating photoluminescence in the region of 1.65 mu m, was showed.

引用

页码：222 / 226

页数：5

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