Manipulating Spin-Lattice Coupling in Layered Magnetic Topological Insulator Heterostructure via Interface Engineering

被引：5

作者：

Maity, Sujan ^{[1
]}

Dey, Dibyendu ^{[2
,3
]}

Ghosh, Anudeepa ^{[1
]}

Masanta, Suvadip ^{[4
]}

De, Binoy Krishna ^{[5
]}

Kunwar, Hemant Singh ^{[5
]}

Das, Bikash ^{[1
]}

Kundu, Tanima ^{[1
]}

Palit, Mainak ^{[1
]}

Bera, Satyabrata ^{[1
]}

Dolui, Kapildeb ^{[6
]}

Watanabe, Kenji ^{[7
]}

Taniguchi, Takashi ^{[8
]}

Yu, Liping ^{[2
,3
]}

Taraphder, A. ^{[9
]}

Datta, Subhadeep ^{[1
]}

机构：

[1] Indian Assoc Cultivat Sci, Sch Phys Sci, 2A & 2B Raja SC Mullick Rd, Kolkata 700032, India

[2] Univ Maine, Dept Phys & Astron, Orono, ME 04469 USA

[3] Univ Cent Florida, Dept Mat Sci & Engn, Orlando, FL 32816 USA

[4] Bose Inst, Dept Phys, Main Campus 93-1,APC Rd, Kolkata 700009, India

[5] Indore Ctr, UGC DAE Consortium Sci Res, Univ Campus,Khandwa Rd, Indore 452001, India

[6] Lomare Technolgies Ltd, 6 London St, London EC3R 7LP, England

[7] Natl Inst Mat Sci, Res Ctr Funct Mat, Tsukuba 3050044, Japan

[8] Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton, Tsukuba 3050044, Japan

[9] Indian Inst Technol Kharagpur, Dept Phys, Kharagpur 721302, West Bengal, India

来源：

ADVANCED FUNCTIONAL MATERIALS | 2024年 / 34卷 / 38期

关键词：

2D magnetism; DFT calculations; spin-phonon coupling; topological insulators; van der Waals heterostructure; RAMAN-SPECTROSCOPY; PHONONS; FILMS; FIELD;

D O I：

10.1002/adfm.202402544

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Induced magnetic order in a topological insulator (TI) can be realized either by depositing magnetic adatoms on the surface of a TI or engineering the interface with epitaxial thin film or stacked assembly of 2D van der Waals (vdW) materials. Herein, the observation of spin-phonon coupling in the otherwise non-magnetic TI Bi2Te3 is reported, due to the proximity of FePS3 (an antiferromagnet (AFM), TN approximate to 120 K), in a vdW heterostructure framework. Temperature-dependent Raman spectroscopic studies reveal deviation from the usual phonon anharmonicity originated from spin-lattice coupling at the Bi2Te3/FePS3 interface at/below 60 K in the peak position (self-energy) and linewidth (lifetime) of the characteristic phonon modes of Bi2Te3 (106 and 138 cm-1) in the stacked heterostructure. The Ginzburg-Landau (GL) formalism, where the respective phonon frequencies of Bi2Te3 couple to phonons of similar frequencies of FePS3 in the AFM phase, is adopted to understand the origin of the hybrid magneto-elastic modes. At the same time, the reduction of characteristic TN of FePS3 from 120 K in isolated flakes to 65 K in the heterostructure, possibly due to the interfacial strain, which leads to smaller Fe-S-Fe bond angles as corroborated by computational studies using density functional theory (DFT). Besides, inserting hexagonal boron nitride within Bi2Te3/FePS3 stacking regains the anharmonicity in Bi2Te3. Controlling interfacial spin-phonon coupling in stacked heterostructure can have potential application in surface code spin logic devices. Temperature-dependent Raman spectroscopic studies reveal spin-phonon coupling in the non-magnetic topological insulator Bi2Te3 due to the proximity of layered antiferromagnetic FePS3 at/below 60 K. Insertion of a few-layer hexagonal boron nitride (hBN) within the stacking suppresses the interfacial coupling, which can have potential application in surface code spin logic devices. image

引用

页数：11

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