A Hot-Via Chip-to-Substrate Interconnect for Ultra-Compact System Package Application Up to W Band

被引：0
作者：
Yang J. [1 ,2 ]
Zou B. [2 ]
Xu J. [1 ]
Zhou J. [2 ]
机构：
[1] State Key Laboratory of Millimeter Waves, Southeast University, Nanjing
[2] Guobo Electronics Company Limited, Nanjing
来源：
Progress in Electromagnetics Research Letters | 2022年 / 107卷
关键词：
Compendex;
D O I：
10.2528/PIERL22020201
中图分类号：
学科分类号：
摘要：
A hot-via chip-to-substrate interconnect with its operation frequency up to W-band for ultra-compact radio frequency (RF) system in package (SIP) is reported in this paper. In order to improve the accuracy of the simulation model in millimeter wave bands, a trapezoidal platform model is established for modeling the RF performance of the hot-via which is formed by inductively coupled plasma (ICP) etching process. A three hot-vias structure in a gallium arsenide (GaAs) chip is employed to form a Ground-Signal-Ground (GSG) transition structure. Bumps on the Silicon substrate are designed as a half quasi-coaxial structure to make it compatible with the assembly process of SIP. A full-wave simulation model is established for a hot-via chip-to-substrate interconnect structure with HFSS, based on which structural parameters, such as the gap between the hot-vias and the radius of the quasi-coaxial structure, are optimized for the best performance over 92–96 GHz. A prototype of the hot-via chip-to-substrate interconnects in their back-to-back connected form has been fabricated. Measured results demonstrate that the overall insertion loss is less than 1.85 dB, and the return loss is better than 12 dB from 92 GHz to 96 GHz. © 2022, Electromagnetics Academy. All rights reserved.
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页码：75 / 81
页数：6
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