Estimation of heat transfer performance of latent thermal energy storage devices with different heat transfer interface types: A review

被引:12
作者
Tian, Shen [1 ]
Ma, Jiahui [1 ]
Shao, Shuangquan [2 ]
Tian, Qingfeng [1 ]
Wang, Zhiqiang [1 ]
Zhao, Yujie [1 ]
Tan, Bolun [1 ]
Zhang, Zheyu [1 ]
Sun, Zhili [1 ]
机构
[1] Tianjin Univ Commerce, Tianjin Key Lab Refrigerat Technol, Tianjin 300134, Peoples R China
[2] Huazhong Univ Sci & Technol, Sch Energy & Power Engn, Wuhan 430074, Peoples R China
关键词
Overall convective heat transfer coefficient; Heat transfer interface; Multi -structural form; LTES device; Heat transfer performance evaluation; PHASE-CHANGE MATERIALS; PCM; SYSTEM; UNIT; EXCHANGER; SOLIDIFICATION; ENCAPSULATION; BUILDINGS; TUBES;
D O I
10.1016/j.est.2024.111315
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
Low and medium grade thermal energy is one of the most commonly used energies. Owing to environmental concerns, the centralized energy supply is assumed to become limited; therefore, the development of thermal energy storage has become a critical need for meeting thermal energy supply and demand. The latent thermal energy storage (LTES) technology has received widespread attention because it exhibits a high energy-storage density and is easy to manage. However, owing to the differences in device structures, phase change materials (PCMs), and working conditions, determining a systematic approach to comprehensively evaluate the heat transfer performance of LTES devices is difficult. In this study, the overall convective heat transfer coefficients from the PCM side are calculated and reviewed according to three types of heat transfer interfaces (HTIs) between the PCM and heat transfer fluid (HTF): flat surface, extended surface, and direct contact. The comparison results show that extensible and diversified HTIs are crucial for enhancing the heat transfer performance, indicating the importance of improving the accessibility between the PCM and HTF. Furthermore, the different heat transfer performances of devices and their improvement methods are clarified. In addition, the limitations associated with the innovative optimization of the HTI structures to be applied in devices are discussed.
引用
收藏
页数:11
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