Manipulation of linear and nonlinear optical properties of type I and type II quantum ring GaAs/AlxGa1−xAs

被引：0

作者：

Sellami, Rihab ^{[1
,2
]}

Kehili, Mohamed Souhail ^{[1
,2
]}

Mansour, Afef Ben ^{[1
,2
]}

Melliti, Adnen ^{[1
,2
]}

机构：

[1] Institut Préparatoire aux Etudes Scientifiques et Techniques, Laboratoire Matériaux-Molécules et Applications, Université de Carthage, BP51, La Marsa,2070, Tunisia

[2] Ecole Nationale Supérieure Des Ingénieurs de Tunis, Université de Tunis, 5 Rue Taha Hussein—Montfleury—1008, Tunis, Tunisia

来源：

Optical and Quantum Electronics | 2021年 / 53卷 / 05期

关键词：

Optoelectronic devices - III-V semiconductors - Aluminum compounds - Nonlinear optics - Semiconducting gallium - Nanorings - Refractive index - Semiconductor quantum wells;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

We present a theoretical study of linear and nonlinear optical properties of carriers in types I and II GaAs /AlxGa1−xAs quantum rings (QRs). We are interested in the effects of incident optical intensity, Al concentration in the barrier and rim height (hM) on linear and nonlinear absorption and refractive index, for both types of QR. After a detailed analysis of the results and a comparison between the optical properties of type I and II QRs, we conclude that we can act on the linear and non-linear absorption coefficient and the refractive index by affecting the parameters of these nanostructures. Thus, GaAs /AlxGa1−xAs quantum rings are appropriate for tunable nano-optoelectronic devices. © 2021, The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature.

引用

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