Effects of Atmospheric Pressure Plasma Electrode Structure on Silicon Carbide Removal Function

被引：0

作者：

Song L. ^{[1
,2
]}

Dun A. ^{[1
]}

Wang Z. ^{[1
]}

Wu L. ^{[1
]}

Peng B. ^{[1
,2
]}

Xu X. ^{[1
]}

机构：

[1] Precision Optical Manufacturing and Testing Center, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai

[2] College of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing

来源：

Zhongguo Jiguang/Chinese Journal of Lasers | 2020年 / 47卷 / 10期

关键词：

Atmospheric pressure plasma polishing; Optics at surfaces; Removal function; Silicon carbide; Ultra-precision machining;

D O I：

10.3788/CJL202047.1002002

中图分类号：

学科分类号：

摘要：

Atmospheric pressure plasma polishing (APPP), as a noncontact chemical etching processing method, exhibits advantages of high efficiency, low cost, and high precision. Therefore, it can be used as an effective method to process silicon carbide. Based on the APPP gas discharge theory and tip electric field distortion effect, the effect of the APPP electrode structure on the plasma discharge stability and removal function is analyzed herein. Furthermore, the optimal electrode tip radius for APPP to process SiC is theoretically derived, finally verifying the optimal radius experimentally. After selecting the electrode, we systematically analyze the removal function characteristics of APPP in etching SiC under different processing parameters. By optimizing the electrode structure and process parameters, the pressureless sintered silicon carbide (S-Si) with a diameter of 50 mm, an initial surface profile error peak-valley value (PV) of 475.846 nm, and initial surface profile error root-mean-square (RMS) of 124.771 nm was processed. After processing for 21 min, the PV and RMS values of the S-SiC are reduced to 103.510 nm and 12.148 nm, respectively, and the RMS convergence rate is 90.26%. Experiments reveal that processing SiC using APP is more efficient than most traditional processing methods. © 2020, Chinese Lasers Press. All right reserved.

引用

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