Influence of vacuum treatment on electrical properties of 6H-SiC crystals

被引：0

作者：

Hadjimagomedov, S.H. ^{[1
]}

Muslimov, A.E. ^{[2
]}

机构：

[1] Dagestan State University, 43-a Gadzhiyev st., Makhachkala, 367000, Russia

[2] FSRC 'Crystallography and Photonics', RAS, 59 Leninsky Ave., Moscow,119333, Russia

来源：

Applied Physics | 2020年 / 03期

关键词：

Schottky barrier diodes - Temperature distribution - Graphene;

D O I：

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学科分类号：

摘要：

The influence of vacuum thermodestruction at a temperature of 1300C on electric properties of crystals 6H-SiC are investigated in this work. Temperature dependence of resistivity of crystals of 6H- SiC before and after treatment were investigated. It has been found that the resistivity of crystals increases many times (300 times). As a result of the treatment, graphene layers are formed on the surface of the 6H-SiC, and the n-SiC-graphene system is a Schottky diode. © 2020 Federal Informational-Analytical Center of the Defense Industry. All rights reserved.

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