Investigating the performance of a novel silicon based p-i-n modulator with enhanced carrier injection

The requirement of a high speed and compact phase modulator is critical for optical phased arrays (OPA) and photonic integrated circuits as it gives the space for additional devices to be incorporated in the circuit. In this study, we propose a novel design for a p-i-n phase modulator, in which, by optimizing the structural configuration, we achieve a significant increase in carrier injection, resulting in an increased refractive index change of - 0.00703 at a low voltage of 1.2 V, while also providing a pi\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\pi $$\end{document} phase shift within a compact length of approximately 110 mu m. Additionally, our device exhibits a high switching speed of up to 25 GHz and ensures distortion-free transmission of message signals at rates of up to 23 Gbps. These results, coupled with its exceptional optical characteristics, position our device as a promising candidate for optical beam steering applications and integration into dense, energy-efficient, and high-speed photonic integrated circuits.